2021年11月1日
Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes
Japanese Journal of Applied Physics
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- 巻
- 60
- 号
- 12
- 開始ページ
- 122003
- 終了ページ
- 122003
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1347-4065/ac2fef
- 出版者・発行元
- IOP Publishing
The effects of the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in InGaN quantum wells (QWs) on the characteristics of InGaN-QW lasers, have been theoretically investigated, and it is found that the temperature dependence of the lasing threshold is strongly affected by the degree of fluctuation. Furthermore, we have experimentally measured the temperature dependence of stimulated-emission threshold excitation power density in photo-pump measurements, and have observed the predicted behavior of temperature dependence. It is considered that the temperature dependence of the lasing threshold could be used for the evaluation of the degree of the potential fluctuation in active layers of InGaN QW lasers.
- リンク情報
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- DOI
- https://doi.org/10.35848/1347-4065/ac2fef
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000716732000001&DestApp=WOS_CPL
- URL
- https://iopscience.iop.org/article/10.35848/1347-4065/ac2fef
- URL
- https://iopscience.iop.org/article/10.35848/1347-4065/ac2fef/pdf
- ID情報
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- DOI : 10.35848/1347-4065/ac2fef
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000716732000001