市川 昌和

Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi 

Science Advances 7(47) 2021年11月19日  査読有り

Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet 

Nature Communications 12(1) 2021年1月12日  査読有り

Formation of epitaxial nanodots on Si substrates with controlled interfaces and their application 

JAPANESE JOURNAL OF APPLIED PHYSICS 54(7) 2015年7月  査読有り

18aCM-6 B20 型MnSi のスキルミオン相におけるplanar Hall 効果 

日本物理学会講演概要集 70 923-923 2015年  

Luminescence properties of Si-capped beta-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates 

JOURNAL OF APPLIED PHYSICS 115(8) 084306 2014年2月  査読有り

Characterization of Ge Films on Si(001) Substrates Grown by Nanocontact Epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS 52(9) 095503 2013年9月  査読有り

Conductive optical-fiber STM probe for local excitation and collection of cathodoluminescence at semiconductor surfaces 

OPTICS EXPRESS 21(16) 19261-19268 2013年8月  査読有り

Luminescence at 1.5μm from Si/GeSn nanodot/Si structures 

J. Phys. D: Appl. Phys. 45(3) 035304 2012年1月  査読有り

Epitaxial Growth of Iron-Silicide Nanodots on Si Substrates Using Ultrathin SiO2 Film Technique and Their Physical Properties 

LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54) 50(6) 65-70 2012年  査読有り

Nanocontact Epitaxy of Thin Films on Si Substrates Using Nanodot Seeds Fabricated by Ultrathin SiO2 Film Technique 

DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES 45(3) 41-45 2012年  査読有り

Fe3Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO2 film technique 

THIN SOLID FILMS 519(24) 8512-8515 2011年10月  査読有り

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds 

NANOTECHNOLOGY 22(26) 265301 2011年7月  査読有り

Epitaxial Growth of High Quality Ge Films on Si(001) Substrates by Nanocontact Epitaxy 

CRYSTAL GROWTH & DESIGN 11(7) 3301-3305 2011年7月  査読有り

Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique 

JOURNAL OF APPLIED PHYSICS 106(1) 2009年7月  査読有り

Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique 

JOURNAL OF APPLIED PHYSICS 105(1) 014308 2009年1月  査読有り

Local optical characterization related to Si cluster concentration in GaAs using scanning tunneling microscope cathodoluminescence spectroscopy 

JAPANESE JOURNAL OF APPLIED PHYSICS 47(7) 6109-6113 2008年7月  査読有り

The enhanced signal of subgap centers in tip-probing photoabsorption spectroscopy with an assist of a subsidiary light 

JOURNAL OF APPLIED PHYSICS 103(4) 044303-1-4 2008年2月  査読有り

Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy 

JOURNAL OF APPLIED PHYSICS 102(11) 114301-1-6 2007年12月  査読有り

Quantum-confinement effect in individual Ge1-xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy 

APPLIED PHYSICS LETTERS 91(1) 013109 2007年7月  査読有り