金勲 (Hoon Kim) - マイポータル - researchmap

基本情報

所属: 旧所属東京大学工学部マテリアル工学科 Ph.D candidate

J-GLOBAL ID: 200901046462290037
researchmap会員ID: 5000090903

研究キーワード

4

MISC

6

Influence of crystal orientation of Ru under-layer on initial growth of copper chemical vapor deposition

H Kim, Y Kojima, H Sato, N Yoshii, S Hosaka, Y Shimogaki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(8-11) L233-L235 2006年3月
Material consideration on Ta, Mo, Ru and Os as glue layer for ULSI Cu interconnection

Jpn. J. Appl. Phys.. 2006年
Effect of Ru crystal orientation on the adhesion characteristics of Cu for ULSI interconnects

Appl. Surf. Sci 2006年
Process design of Cu(Sn) alloy deposition for highly reliable ultra large-scale integration interconnects

H Kim, T Koseki, T Ohba, T Ohta, Y Kojima, H Sato, Y Shimogaki

THIN SOLID FILMS 491(1-2) 221-227 2005年11月
Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization

Jpn. J. Appl. Phys. 44, L1278 2005年
Cu wettability and diffusion barrier property of Ru thin film for Cu metallization

H Kim, T Koseki, T Ohba, T Ohta, Y Kojima, H Sato, Y Shimogaki

JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152(8) G594-G600 2005年

共同研究・競争的資金等の研究課題

1

Process development of highly reliable Cu interconnect by material design and oxidation / reduction chemistry of Cu-CVD