論文

査読有り
2016年11月

BEDT-TTF Salts Formed with Tetrahedrally Coordinated Zinc(II) Complex Anions

CRYSTAL GROWTH & DESIGN
  • Yukihiro Yoshida
  • ,
  • Hiroshi Ito
  • ,
  • Yuto Nakamura
  • ,
  • Manabu Ishikawa
  • ,
  • Akihiro Otsuka
  • ,
  • Hiromi Hayama
  • ,
  • Mitsuhiko Maesato
  • ,
  • Hideki Yamochi
  • ,
  • Hideo Kishida
  • ,
  • Gunzi Saito

16
11
開始ページ
6613
終了ページ
6630
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/acs.cgd.6b01294
出版者・発行元
AMER CHEMICAL SOC

Twelve kinds of bis(ethylenedithio)tetrathiafulvalene (BEDTTTF or ET) cation radical salts with tetrahedrally coordinated zinc(II) complex anions were obtained by electrocrystallitaticn; most of them were produced via the additional reaction of Lem/is-basic cyano-containing anions [N(CN)2(-), C(CN)3(-), and Au(CN)2] with ZnX2 (X = Cl-, Br-, and SCN-) that occurred during electrocrystallization. On the basis of the charge and arrangement of ET molecules, these salts werepredorninantly categorized into four groups: (A) isolated ET.+ dimers or tetramers, (B) infinite ET.+ ribbon, (C) infinite layers either with a peculiar EV's+ arrangement of ET molecules with partial charges other than +0.5, and (E)_ infinite layers of EV's' molecules. In A, zinc(II) complex anions including a unidentate-coordinated C(CN)(3) or Au(CN)(2) group spatially interrupt' the 'infinite arrangement of ET molecules. The ET' ribbon in B runs parallel to the pseudopolymeric chain of disordered Zn[C(CN)(3)](2)Br-2(2-) ions. In C, two salts are semiconductive, whereas the remaining two salts behave as metallic at room temperature and undergo a metal insulator transition on cooling. The ET molecules in D are arranged in a 0421,40 -like packing motif, due to the nonplanar anionic layers. All salts are semiconductive and exhibit a gradual evolution in their superstructures with cooling associated with charge dispropOrtionation.

Web of Science ® 被引用回数 : 5

リンク情報
DOI
https://doi.org/10.1021/acs.cgd.6b01294
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000387094600059&DestApp=WOS_CPL
ID情報
  • DOI : 10.1021/acs.cgd.6b01294
  • ISSN : 1528-7483
  • eISSN : 1528-7505
  • Web of Science ID : WOS:000387094600059

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