Yoshihiro Kangawa - Presentations - researchmap

Presentations

501

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Vacancies in III-Nitrides (II): Diffusion near Hetero Interfaces

R. Shimauchi, Y. Kangawa, A. Kusaba

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), Apr, 2024
Vacancies in III-Nitrides (I): Formation under Reconstructed Surfaces

K. Tateyama, Y. Kangawa, A. Kusaba, T. Kawamura

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), Apr, 2024
First-Principles Calculations of Bandgap Control of κ-Ga2O3 by Uniaxial Strain

T. Yamashita, T. Kawamura, T. Akiyama, Y. Kangawa

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), Apr, 2024
Electronic structures of κ Ga2O3/Al2O3 superlattices

T. Nishimura, T. Kawamura, T. Akiyama, Y. Kangawa

10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2024), Apr, 2024
半導体化学気相成長のプロセスモデリング

寒川義裕

日本金属学会九州支部日本鉄鋼協会九州支部 2024年度春季講演会（湯川記念講演会）, Apr, 2024 Invited
窒化ガリウム中におけるVGa-VN周りの欠陥反応解析

中村城太, 小田将人, 寒川義裕

第71回応用物理学会春季学術講演会, Mar, 2024
化学気相成長におけるプロセスインフォマティクス〜現状と将来展望〜

寒川義裕

（独）日本学術振興会 R031ハイブリッド量子ナノ技術委員会第15回研究会（特別企画）「AIと科学技術・社会」, Mar, 2024 Invited
III族窒化物MOVPEにおける表面再構成と点欠陥安定性の相関解析

寒川義裕

一般社団法人GaNコンソーシアム2023年度結晶・評価WG研究会（第1回）, Dec, 2023 Invited
Correlation between Surface Reconstruction and Impurity Incorporation in III-Nitride MOCVD: Surface Phase Diagram

K. Tateyama, F. Kihara, A. Kusaba, Y. Kangawa, T. Kawamura

The 42nd Electronic Materials Symposium (EMS-42), Oct, 2023
First-principles calculation of band structure of alpha-Ga2O3/Al2O3 superlattices

T. Kawamura, T. Akiyama, Y. Kangawa

The 20th International Conference on Crystal Growth and Epitaxy, Jul, 2023
Theoretical exploration of widegap materials with the corundum structure for heteroepitaxy on alpha−Ga2O3

Shun Yamakawa, Hirofumi Akamatsu, Akira Kusaba, Yoshihiro Kangawa

The 20th International Conference on Crystal Growth and Epitaxy, Jul, 2023
スパッタAlN膜の高温アニールプロセスにおけるスパースモデリング

原太一, 草場彰, 寒川義裕, 三宅秀人

第15回ナノ構造エピタキシャル成長講演会, Jun, 2023
Numerical simulations of AlGaN heterostructures with polarization-doping

Konrad Sakowski, Ashfaq Ahmad, Pawel Strak, Kosuke Sato, Kazuki Yamada, Motoaki Iwaya, Pawel Kempisty, Yoshihiro Kangawa, Jacek Piechota, Stanislaw Krukowski

The 6th International Workshop on Ultraviolet Materials and Devices, Jun, 2023
GaN MOCVDにおけるプロセスインフォマティクスの進展

寒川義裕

化学工学会CVD反応分科会第37回シンポジウム「CVDと薄膜の計算科学」, Mar, 2023 Invited
Process Informatics − 半導体化学気相成長の科学

寒川義裕

学習院桜友会寄付講座（生命情報社会学）シンポジウム X–informatics 〜巡り会うデータサイエンス〜, Feb, 2023 Invited
窒化物半導体ヘテロ界面における相互拡散メカニズムの理論検討

宮本滉庸, 草場彰, 寒川義裕

第13回ナノ構造エピタキシャル成長講演会, Dec, 2021
窒化物半導体プロセスインフォマティクスの開拓

寒川義裕

日本材料学会ナノ材料部門委員会・半導体エレクトロニクス部門委員会合同研究会, Nov, 2022 Invited
Ab Initio Studies on TMA and TMI Decomposition during MOVPE Growth

Yuya Nagashima, Daichi Akaishi, Shugo Nitta, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi

41st Electronic Materials Symposium, Oct, 2022
Modelling interlayer diffusion in III-nitride hetero interface

Koyo Miyamoto, Akira Kusaba, Yoshihiro Kangawa

41st Electronic Materials Symposium, Oct, 2022
Estimation of optimal conditions for semiconductor nanowires by MBE growth using machine learning

Taichi Hara, Yuichiro Maeda, Akira Kusaba, Yoshihiro Kangawa, Fumitaro Ishikawa, Tetsuya Okuyama

41st Electronic Materials Symposium, Oct, 2022