論文

2017年3月

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Yuya Inatomi
  • ,
  • Yoshihiro Kangawa
  • ,
  • Koichi Kakimoto
  • ,
  • Akinori Koukitu

56
3
開始ページ
038002-1
終了ページ
3
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/JJAP.56.038002
出版者・発行元
IOP PUBLISHING LTD

An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated. (C) 2017 The Japan Society of Applied Physics


リンク情報
DOI
https://doi.org/10.7567/JJAP.56.038002
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000395736400001&DestApp=WOS_CPL