FUKUYAMA Atsuhiko

J-GLOBAL         Last updated: Apr 4, 2019 at 02:40
 
Avatar
Name
FUKUYAMA Atsuhiko
E-mail
a-fukuyamacc.miyazaki-u.ac.jp
Affiliation
University of Miyazaki
Section
Engineering educational research section Department of Applied Physics and Electronic Engineering
Job title
Professor
Degree
Doctor (Engineering)(Tohoku University), Master(Engineering)(University of Miyazaki), Bachelor(University of Miyazaki)

Research Interests

 
 

Research Areas

 
 

Awards & Honors

 
Feb 2004
1st Incentive Prize for the Study of Advanced Materials Processing
 
Apr 2003
2nd Incentive Prize for the Study of Infromation Technology
 
Jun 2002
15th Ando Incentive Prize for the Study of Electronics
 

Published Papers

 
Effect of strain relaxation layer insertion on carrier recombination and escaping process in superlattice solar cell structures using photoluminescence spectroscopy
T. Nakamura, A. Fukuyama, M. Sugiyama, T. Ikari
Journal of Physics D: Applied Physics   52 045104-1-045104-8   Nov 2018   [Refereed]
We discuss the effect of interlayer insertion into the light absorption region of a carrier escape process for superlattice (SL) solar cells determined by the temperature dependence of photoluminescence (PL) signals. 20-period SL solar cells, with...
Optical properties of Si nanopillar/Si0.7Ge0.3 compsite film fabricated by using a neutral beam etching technique
N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake
Proceedings of the 19th Int. Sympo. on Advanced Fluid Information   94-95   Nov 2018   [Refereed]
We prepared four-stacked GaAs nanodisk (ND) in nanopillar (NP) structure by using damage-less neutral beam etching and carried out photoluminescence (PL) measurement on for these samples. The diameter distribution of NP was measured by top view SE...
Minority carrier lifetimes in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake
Transactions of the Material Research Society of Japan   43(1) 49-52   Apr 2018   [Refereed]
Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) films possess the following specific characteristics: (a) the appearance of additional energy levels in diamond bandgap and (b) large absorption coeff...
Quantum confinement effect in lateral direction of GaAs nanodisk fabricated by neutral beam etching
N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake
Proceedings of the 18th Int. Sympo. on Advanced Fluid Information   48-49   Nov 2017   [Refereed]
We prepared four-stacked GaAs nanodisk (ND) in nanopillar (NP) structure by using damage-less neutral beam etching and carried out photoluminescence (PL) measurement on for these samples. The diameter distribution of NP was measured by top view SE...
Suzuki Hidetoshi, Sasaki Takuo, Takahasi Masamitu, Ohshita Yoshio, Kojima Nobuaki, Kamiya Itaru, Fukuyama Atsuhiko, Ikari Tetsuo, Yamaguchi Masafumi
Japanese Journal of Applied Physics   56(08) 08MA06-1-08MA06-5   Jul 2017   [Refereed]
The effect of substrate orientation on strain relaxation mechanisms of an InGaAs layer grown on vicinal GaAs substrates was investigated by in situ X-ray diffraction (XRD). The crystallographic tilt and indium segregation in the InGaAs layer were ...

Misc

 
Non-radiative Carrier recombination profiles in the multi-junction solar cells
A. Fukuyama, T. Sugimoto, T. Murakami, T. Aihara, T. Ikari
Cho-onpa TECHNO   27(4) 66-71   Jul 2015
Study of thermally carrier escape from an AlGaAs/GaAs single quantum well using temperature-dependent I-V measurements
T. Murakami, H. Kuradome, T. Sugimoto, T. Amhara, A. Fukuyama, T. Ikari
Bulletin of Faculty of Engineering, University of Miyazaki   44 1-4   Jul 2015
Site selective growth of GaAs-NWs on patterned Si substrate
I. Harada, T. Kawase, H. Suzuki, A. Fukuyama, T. Ikari
Bulletin of Faculty of Engineering, University of Miyazaki   44 5-8   Jul 2015
Non-Radiative Carrier Recombination and Carrier Transport Properties in the Multiple Quantum Well Solar Cell
T. Sugimoto, T. Aihara, M. Sugiyama, Y. Nakano, A. Fukuyama, and T. Ikari
Bulletin of Faculty of Engineering, University of Miyazaki   43 17-20   Aug 2014
Effects of Gas Flow Sequence on GaAsN Films Grown by Atomic Layer Epitaxy
A. Haga, H. Sadato, T. Haraguchi, H. Suzuki, A. Fukuyama, M. Ozeki, and T. Ikari
Bulletin of Faculty of Engineering, University of Miyazaki   42 27-30   Aug 2013

Books etc

 
Nonradiative Investigation of Impurity and Defect Levels in Si and GaAsby Piezoelectric Photo-acoustic Spectroscopy
T. Ikari and A. Fukuyama (Part:Joint Work, 第5章を分担執筆)
SPIE Press (Washington, USA) Total 353 page (分担) 145-174 page   Jun 2000