Atsuhiko Fukuyama - My portal

Profile Information

Affiliation: Professor, Engineering educational research section Department of Applied Physics and Electronic Engineering, University of Miyazaki

Degree: Doctor (Engineering)(Tohoku University)
Master(Engineering)(University of Miyazaki)
Bachelor(University of Miyazaki)

J-GLOBAL ID: 200901018695134201
researchmap Member ID: 5000091604

External link: http://www.cc.miyazaki-u.ac.jp/fukuyamalabo/

Research Interests

Nano and material

Research Areas

Awards

Nov, 2016

平成28年度(第8回)半導体材料・デバイスフォーラムポスター発表奨励賞, フォトルミネッセンス法を用いた超格子構造中のキャリア輸送評価, 熊本高専半導体材料・デバイス研究部

魯家男, 武田秀明, 中村翼, 松落高輝, 鈴木秀俊, 碇哲雄, K. Toprasertpong, 杉山正和, 中野義昭, 福山敦彦
Nov, 2015

平成27年度(第7回)半導体材料・デバイスフォーラムポスター発表奨励賞, 無触媒MBE‐VLS成長したGaAsナノワイヤのSiドーピングによる結晶構造変化, 熊本高専半導体材料・デバイス研究部

岩元杏里, 中野真理菜, 杉原圭二, 大堀大介, 境健太郎, 本田善央, 山口雅史, 天野浩, 碇哲雄, 福山敦彦
Feb, 2004

1st Incentive Prize for the Study of Advanced Materials Processing
Apr, 2003

2nd Incentive Prize for the Study of Infromation Technology
Jun, 2002

15th Ando Incentive Prize for the Study of Electronics

Papers

207

Effect of strain relaxation layer insertion on carrier recombination and escaping process in superlattice solar cell structures using photoluminescence spectroscopy

T. Nakamura, A. Fukuyama, M. Sugiyama, T. Ikari

Journal of Physics D: Applied Physics, 52 045104-1-045104-8, Nov 20, 2018 Peer-reviewed
Optical properties of Si nanopillar/Si0.7Ge0.3 compsite film fabricated by using a neutral beam etching technique

N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake

Proceedings of the 19th Int. Sympo. on Advanced Fluid Information, 94-95, Nov 7, 2018 Peer-reviewed
Minority carrier lifetimes in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake

Transactions of the Material Research Society of Japan, 43(1) 49-52, Apr 1, 2018 Peer-reviewed
Quantum confinement effect in lateral direction of GaAs nanodisk fabricated by neutral beam etching

N. Nishikawa, S. Takeichi, T. Hanada, S. Tategami, A. Fukuyama, T. Yoshitake

Proceedings of the 18th Int. Sympo. on Advanced Fluid Information, 48-49, Nov 1, 2017 Peer-reviewed
Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction

Hidetoshi Suzuki, Takuo Sasaki, Masamitu Takahasi, Yoshio Ohshita, Nobuaki Kojima, Itaru Kamiya, Atsuhiko Fukuyama, Tetsuo Ikari, Masafumi Yamaguchi

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(8) 08MA06-1-08MA06-5, Aug, 2017 Peer-reviewed
Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p–i–n GaAs solar cells

Atsuhiko Fukuyama, Kouki Matsuochi, Tsubasa Nakamura, Hideaki Takeda, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano, Hidetoshi Suzuki, Tetsuo Ikari

Japanese Journal of Applied Physics, 56(8S2) 08MC07-1-08MC07-5, Jul, 2017 Peer-reviewed
Photoluminescence emission from GaAs nanodisks in GaAs/AlGaAs nanopillar arrays fabricated by neutral beam etching

D. Ohori, A. Fukuyama, K. Sakai, A. Higo, C. Thomas, S. Samukawa, T. Ikari

Japanese Journal of Applied Physics, 56(05) 050308-1-050308-4, Apr 18, 2017 Peer-reviewed
Optical properties of miniband formed in the InGaAs/GaAs quantum well solar cells by means of photoreflectance, photoluminescence, and photothermal spectroscopies

A. Fukuyama, K. Matsuochi, T. Nakamura, H. Takeda, H. Suzuki, K. Toprasertpong, M. Sugiyama, Y. Nakano, T. Ikari

Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings, Dec 7, 2016 Peer-reviewed
Radiative carrier recombination process in GaAs ND fabricated by bio-template and neutral beam etching embedded by AlGaAs

A. Iwamoto, D. Ohori, Cedric Thomas, A. Higo, S. Samukawa, T. Ikari, A. Fukuyama

Proceedings of the 17th Int. Symo. on Advanced Fluid Information, 16-17, Dec 1, 2016
Piezoelectric photothermal detection of the mini-band edge energies of strain-balanced InGaAs/GaAsP superlattice structures

T. Ikari, A. Fukuyama, T. Nakamura, M. Sugiyama, Y. Nakano

Proceedings of Symposium on Ultrasonic Electronics, 37 3P1-3P7, Dec 1, 2016 Peer-reviewed
Cross-sectional transmission electron microscope observation of Si clathrate thin films grown on Si (111) substrates

K. Sakai, H. Takeshita, T. Haraguchi, H. Suzuki, F. Ohashi, T. Kume, A. Fukuyama, S. Nonomura, T. Ikari

Thin Solid Films, 621 32-35, Nov 12, 2016 Peer-reviewed
Optical properties of quantum energies in GaAs quantum nanodisks produced using a bio-nanotemplate and a neutral beam etching technique

Daisuke Ohori, Atsuhiko Fukuyama, Cedric Thomas, Akio Higo, Seiji Samukawa, Tetsuo Ikari

JAPANESE JOURNAL OF APPLIED PHYSICS, 55(9) 092101-1-092101-4, Sep, 2016 Peer-reviewed
Observation of mini-band formation in the ground and high-energy electronic states of super-lattice solar cells

T. Usuki, K. Matsuochi, T. Nakamura, K. Toprasertpong, A. Fukuyama, M. Sugiyama, Y. Nakano, T. Ikari

Proceedings of SPIE, 9743 974312-1-974312-8, Apr 1, 2016 Peer-reviewed
Thin film of guest-free type-II silicon clathrate on Si(111) wafer

T. Kume, F. Ohashi, K. Sakai, A. Fukuyama, M. Imai, H. Udono, T. Ban, H. Habuchi, H. Suzuki, T. Ikari …

Thin Solid Films, 609 30-34, Jan 15, 2016 Peer-reviewed
Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy

Yuki Yokoyama, Atsuhiko Fukuyama, Tomohiro Haraguchi, Toshihiro Yamauchi, Tetsuo Ikari, Hidetoshi Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS, 55(1) 01AC06-1-01AC06-4, Jan, 2016 Peer-reviewed
Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using Photoreflectance and Photoluminescence Spectroscopy

Tsubasa Nakamura, Kouki Matsuochi, Hidetoshi Suzuki, Tetsuo Ikari, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano, Atsuhiko Fukuyama

Energy Procedia, 102 121-125, 2016 Peer-reviewed
Photoluminescence study on GaAs quantum nanodisk array fabricated by bio-nano-template and neutral beam etching

D. Ohori, K. Kondo, C. Thomas, A. Higo, S. Samukawa, A. Fukuyama, T. Ikari

Proceedings of the 15th Int. Symo. on Advanced Fluid Information, 98-99, Dec 1, 2015
Zinc-blende and wurtzite phase separation in catalyst-free molecular beam epitaxy vapor-liquid-solid-grown Si-doped GaAs nanowires on a Si(111) substrate induced by Si doping

Akio Suzuki, Atsuhiko Fukuyama, Hidetoshi Suzuki, Kentaro Sakai, Ji-Hyun Paek, Masahito Yamaguchi, Tetsuo Ikari

JAPANESE JOURNAL OF APPLIED PHYSICS, 54(3) 035001-1-035001-5, Mar, 2015 Peer-reviewed
Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

Taketo Aihara, Atsuhiko Fukuyama, Hidetoshi Suzuki, Hiromasa Fujii, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

JOURNAL OF APPLIED PHYSICS, 117(8) 084307-1-084307-6, Feb, 2015 Peer-reviewed
Effect of preheating time on uniformity of electrodeposited Cu2ZnSnS4 thin films studied by carrier lifetime and photoluminescence measurements

T. Hamada, A. Fukuyama, F. Jiang, S. Ikeda, T. Ikari

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 12(6) 725-728, 2015 Peer-reviewed

Misc.

n-およびp-Si基板のライフタイムと光照射時のキャリアタイプ反転による太陽電池特性への影響

高内健二郎, 立神秀弥, 松田真輝, 碇哲雄, 西岡賢祐, 福山敦彦

宮崎大学工学部紀要, 47 73-76, Jul 1, 2018
集光照射によるSiおよびGaAs基板のHall移動度変化と太陽電池特性への影響

松田真輝, 立神秀弥, 高内健二郎, 碇哲雄, 西岡賢祐, 福山敦彦

宮崎大学工学部紀要, 47 77-82, Jul 1, 2018
擬似太陽光照射による単結晶Siのキャリア移動度変化と太陽電池特性への影響

立神秀弥, 徳田直樹, 高内健二郎, 碇哲雄, 西岡賢祐, 福山敦彦

宮崎大学工学部紀要, 46 95-99, Jul 1, 2017
Investigation of Carrier Transport in GaAs-interlayer-inserted Strain-Balanced InGaAs/GaAsP Quantum Well Solar Cells

K Toprasertpong

46 89-94, Jul 1, 2017
液滴エピタキシー法により作製したGaAs QDsの発光再結合特性

杉原圭二, 中野真理菜, 岩元杏里, 大堀大介, 本田善央, 天野浩, 碇哲雄, 福山敦彦

宮崎大学工学部紀要, 46 85-88, Jul 1, 2017
InGaAs/GaAsP系量子井戸太陽電池におけるミニバンド形成過程とその光学的評価

松落高輝, 中村翼, 武田秀明, K. Toprasertpong, 杉山正和, 中野義昭, 碇哲雄, 福山敦彦

宮崎大学工学部紀要, 45 119-124, Jul 1, 2016
Effects of Si Dopant Gas Flow Sequence on Electrical Properties of GaAsN Films Grown by ALE

45 115-118, Jul 1, 2016
擬似太陽光照射による単結晶Siのキャリア移動度の変化と太陽電池特性への影響

徳田直樹, 立神秀弥, 李垚, 碇哲雄, 西岡賢祐, 福山敦彦

宮崎大学工学部紀要, 45 111-114, Jul 1, 2016
フォトルミネッセンス法による加工Si基板上半極性(1-101)面GaN薄膜の発光再結合特性評価

杉原圭二, 中野真理菜, 岩元杏里, 大堀大介, 本田善央, 天野浩, 碇哲雄, 福山敦彦

宮崎大学工学部紀要, 45 105-110, Jul 1, 2016
Non-radiative Carrier recombination profiles in the multi-junction solar cells

A. Fukuyama, T. Sugimoto, T. Murakami, T. Aihara, T. Ikari

Cho-onpa TECHNO, 27(4) 66-71, Jul 15, 2015
Site selective growth of GaAs-NWs on patterned Si substrate

I. Harada, T. Kawase, H. Suzuki, A. Fukuyama, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 44 5-8, Jul 1, 2015
Study of thermally carrier escape from an AlGaAs/GaAs single quantum well using temperature-dependent I-V measurements

T. Murakami, H. Kuradome, T. Sugimoto, T. Amhara, A. Fukuyama, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 44 1-4, Jul 1, 2015
非発光再結合検出による量子ナノ構造太陽電池材料評価

福山敦彦, 杉山正和, 中野義昭, 碇哲雄

日本結晶成長学会誌, 41(2) 50-57, Sep 1, 2014
Non-Radiative Carrier Recombination and Carrier Transport Properties in the Multiple Quantum Well Solar Cell

T. Sugimoto, T. Aihara, M. Sugiyama, Y. Nakano, A. Fukuyama, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 43 17-20, Aug 1, 2014
Reduction of Rotational Twin Formation in GaAs by Irradiation of Group III Atoms to Si(111) Substrate

D. Ito, H. Tachikake, H. Suzuki, A. Fukuyama, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 42 19-22, Aug 1, 2013
The Effect of Strain on the Optical Properties of GaN Grown on Si Investigated by Photoreflectance and Photoluminescence

Y. Motoda, A. Suzuki, D. Ohori, A. Fukuyama, Y. Honda, M. Yamaguchi, H. Amano, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 42(42) 23-26, Aug 1, 2013
Effects of Gas Flow Sequence on GaAsN Films Grown by Atomic Layer Epitaxy

A. Haga, H. Sadato, T. Haraguchi, H. Suzuki, A. Fukuyama, M. Ozeki, T. Ikari

Bulletin of Faculty of Engineering, University of Miyazaki, 42 27-30, Aug 1, 2013
Investigation of the Photovoltaic Performance of the Polycrystalline Silicon p-n Junction by a Photothermal Measurement

Daisuke ISHIBASHI, Yohei SATO, Atsuhiko FUKUYAMA, Tetsuo IKARI

Bulletin of Faculty of Engineering, University of Miyazaki, 41 13-16, Jul 1, 2012
Temperature dependence of the optical gap of diamond-like carbon films investigated by piezoelectric photothermal and photoluminescence spectroscopies

Wen DING, Yousuke NAKANO, Kentaro SAKAI, Atsuhiko FUKUYAMA, Tetsuo IKARI

Bulletin of Faculty of Engineering, University of Miyazaki, 41 9-12, Jul 1, 2012
Comparison of the band structure change by the Nitrogen content in GaAsN film with the BAC model

Kazumasa MUTAGUCHI, Atsuhiko FUKUYAMA, Tetsuo IKARI

Bulletin of Faculty of Engineering, University of Miyazaki, 39 29-34, Sep, 2010

Books and Other Publications

微結晶シリコン太陽電池の光学的性質

碇哲雄, 福山敦彦 (Role: Joint author)

シーエムシー, Jul 24, 2009 (ISBN: 9784781301341)
LED革新のための最新技術と展望

福山敦彦

情報機構, Nov 14, 2008 (ISBN: 9784904080092)
Nonradiative Investigation of Impurity and Defect Levels in Si and GaAsby Piezoelectric Photo-acoustic Spectroscopy

T. Ikari, A. Fukuyama (Role: Joint author, 第５章を分担執筆)

SPIE Press (Washington, USA) Total 353 page (分担) 145-174 page, Jun, 2000

Professional Memberships

Industrial Property Rights

特願2014-245861 光電変換素子および光電変換素子の製造方法

福山敦彦, 雨堤耕史, 喜井浩紀
特許第4938960 光電変換装置の製造方法及び光電変換装置

碇哲雄, 福山敦彦, 境健太郎, 小林靖之, 山下信樹, 米倉義道