白木靖寛 (Yasuhiro Shiraki) - マイポータル

基本情報

所属: 東京都市大学大学院工学研究科電気電子工学専攻東京都市大学大学院工学研究科電気電子工学専攻

学位: 工学博士(東京大学)

J-GLOBAL ID: 200901045545274061
researchmap会員ID: 5000092097

研究キーワード

研究分野

経歴

東京都市大学総合研究所東京都市大学総合研究所, 教授

学歴

委員歴

2010年

応用物理学会, 会長
2001年 - 2003年

Association of Asia Pacific Physics Societies (AAPPS), Vice chairman
1998年 - 2000年

Association of Asia Pacific Physics Societies (AAPPS), Secretary General

MISC

715

Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields

N. Miura, N. V. Kozlova, K. Doerr, J. Freudenberger, L. Schultz, O. Drachenko, K. Sawano, Y. Shiraki

JOURNAL OF LOW TEMPERATURE PHYSICS 159(1-2) 222-225 2010年4月
Optical anisotropies of Si grown on step-graded SiGe(110) layers

R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami …

APPLIED PHYSICS LETTERS 96(9) 091904 2010年3月
Landau level crossing and pseudospin phase transitions in Si quantum wells

Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 42(4) 1018-1021 2010年2月
Cyclotron resonance of two-dimensional electrons in a Si quantum well

R. Masutomi, A. Sekine, K. Sasaki, K. Sawano, Y. Shiraki, T. Okamoto

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 42(4) 1184-1187 2010年2月
Formation of uniaxially strained SiGe by selective ion implantation technique

Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki

THIN SOLID FILMS 518(9) 2454-2457 2010年2月
Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation

Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa, Y. Shiraki

THIN SOLID FILMS 518(/) S162-S164 2010年1月
Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, K. M. Itoh

PHYSICAL REVIEW B 80(20) 205206 2009年11月
Well-width dependence of valley splitting in Si/SiGe quantum wells

Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

APPLIED PHYSICS LETTERS 95(22) 222109 2009年11月
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima

SOLID-STATE ELECTRONICS 53(10) 1135-1143 2009年10月
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates

Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima

Solid-State Electronics 53(10) 1135-1143 2009年10月
Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures

K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, Y. Shiraki

APPLIED PHYSICS LETTERS 95(12) 122109 2009年9月
Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well

Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki

PHYSICAL REVIEW B 79(24) 241302 2009年6月
High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate

M. Myronov, D. R. Leadley, Y. Shiraki

APPLIED PHYSICS LETTERS 94(9) 092108 2009年3月
Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots

Jinsong Xia, Ryuichiro Tominaga, Seiji Fukamitsu, Noritaka Usami, Yasuhiro Shiraki

JAPANESE JOURNAL OF APPLIED PHYSICS 48(2) 022102 2009年2月
Local control of strain in SiGe by ion-implantation technique

K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki

Journal of Crystal Growth 311(3) 806-808 2009年1月15日
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K

Solid-State Electronics 53 (10)(/) 1135-1143 2009年
Local control of strain in SiGe by ion-implantation technique

K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki

JOURNAL OF CRYSTAL GROWTH 311(3) 806-808 2009年1月
High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si (001) virtual substrate

M. Myronov, D. R. Leadley, Y. Shiraki

Applied Physics Letters 94(9) 092108 2009年
Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices

Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, Yasuhiro Shiraki

JOURNAL OF APPLIED PHYSICS 105(1) 013504 2009年1月
Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates

Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki

JOURNAL OF CRYSTAL GROWTH 311(3) 814-818 2009年1月

もっとみる

書籍等出版物

Silicon-germanium (SiGe) nanostructures; Production, properties and applications in electronics

Woodhead Publishing 2011年 (ISBN: 9781845696894)
Professor

Woodhead Publishing 2011年 (ISBN: 9781845696894)

白木靖寛

基本情報

研究キーワード

研究分野

経歴

学歴

委員歴

MISC

書籍等出版物

所属学協会

共同研究・競争的資金等の研究課題

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