MISC

1997年

Temperature dependence of TDDB characteristics of thin SiO2 film for flash memory

PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
  • M Katsumata
  • ,
  • A Teramoto
  • ,
  • K Kobayashi
  • ,
  • MK Mazumder
  • ,
  • M Sekine
  • ,
  • H Koyama

開始ページ
152
終了ページ
155
記述言語
英語
掲載種別
出版者・発行元
I E E E

Using a large area capacitor, the temperature dependence of TDDB characteristics for various electric fields was investigated in detail. From the experimental results, it is found that the Qbd value is more dependent on temperature rather than on the electric field. It is also found that the initial breakdown region is divided into two parts, above 175 degrees C, the activation energy of the front part of the initial breakdown region is greater than the intrinsic region.
It should be possible to use this newly obtained result efficiently to estimate the extrinsic breakdown distribution within a short period during the burn-in test. Therefore, the findings should contribute to the improvement of the reliability of the actual device.

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1997BK01Z00028&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0031358572&origin=inward
ID情報
  • SCOPUS ID : 0031358572
  • Web of Science ID : WOS:A1997BK01Z00028

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