1997年
Temperature dependence of TDDB characteristics of thin SiO2 film for flash memory
PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
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- 開始ページ
- 152
- 終了ページ
- 155
- 記述言語
- 英語
- 掲載種別
- 出版者・発行元
- I E E E
Using a large area capacitor, the temperature dependence of TDDB characteristics for various electric fields was investigated in detail. From the experimental results, it is found that the Qbd value is more dependent on temperature rather than on the electric field. It is also found that the initial breakdown region is divided into two parts, above 175 degrees C, the activation energy of the front part of the initial breakdown region is greater than the intrinsic region.
It should be possible to use this newly obtained result efficiently to estimate the extrinsic breakdown distribution within a short period during the burn-in test. Therefore, the findings should contribute to the improvement of the reliability of the actual device.
It should be possible to use this newly obtained result efficiently to estimate the extrinsic breakdown distribution within a short period during the burn-in test. Therefore, the findings should contribute to the improvement of the reliability of the actual device.
- リンク情報
- ID情報
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- SCOPUS ID : 0031358572
- Web of Science ID : WOS:A1997BK01Z00028