2017年5月
Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
APPLIED PHYSICS EXPRESS
- 巻
- 10
- 号
- 5
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.10.055503
- 出版者・発行元
- IOP PUBLISHING LTD
A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 +/- 0.06 and 0.46 +/- 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV- centers near the surface compared with the states obtained for alternatively terminated surfaces. (C) 2017 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/APEX.10.055503
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000399121100001