OHNO Yutaka

J-GLOBAL         Last updated: Oct 10, 2019 at 10:05
 
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Name
OHNO Yutaka
Nickname
handle0133213
E-mail
yutakaohnoimr.tohoku.ac.jp
URL
http://db.tohoku.ac.jp/whois/e_detail/aeb00cb96ae9052a4de214b3e96a00d3.html
Affiliation
Tohoku University
Section
Institute for Materials Research Physics of Crystal Defects
Job title
Associate Professor
Degree
博士(理学)(Osaka University), 修士(工学)(Osaka University)

Research Areas

 
 

Education

 
 
 - 
Mar 1992
物理系専攻, 基礎工学研究科, Osaka University
 
 
 - 
Mar 1990
物性物理工学科, 基礎工学部, Osaka University
 

Committee Memberships

 
Feb 2017
 - 
Today
日本学術振興会接合界面創成技術第191委員会  委員
 
Apr 2018
   
 
10th International Workshop on Crystalline Silicon for Solar Cells  Local Steering Committee
 
Jun 2016
 - 
Aug 2017
29th International Conference on Defects in Semiconductors  International Programme Committee & Local Program Subcommittee
 
Apr 2005
 - 
Mar 2017
日本物理学会  Webページ管理者(領域10)
 
Feb 2015
 - 
Mar 2016
日本物理学会第71回年次大会実行委員会  会計
 

Awards & Honors

 
May 2019
Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature, Best Presentation Award, 6th International Workshop on Low Temperature Bonding for 3D Integration
Winner: Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
 
May 2019
Fabrication of Diamond/Cu Direct Bonding for Power Device Application, Best Poster Presentation Award, 6th International Workshop on Low Temperature Bonding for 3D Integration
Winner: S. Kanda, S. Masuya, M. Kasu, Y. Ohno, Y. Shimizu, N. Shigekawa, J. Liang
 
Jul 2017
多結晶材料情報学によるスマートシリコンインゴットの創製に向けて, イノべイティブPV賞, 日本学術振興会産学協力研究委員会次世代の太陽光発電システム第175委員会
Winner: 宇佐美徳隆, 羽山優介, 高橋勲, 松本哲也, 工藤博章, 横井達也, 松永克志, 沓掛健太朗, 大野裕
 
May 2017
データ科学的手法を用いた効率的なマッピングの提案, 最優秀ポスター賞, 東北大学・金属材料研究所第133回講演会
Winner: 沓掛健太朗,菊地亮太,出浦桃子,大野裕,下山幸治,米永一郎
 
Apr 2012
AlN薄膜のTEM内ナノインデンテーションによる転位導入と伝搬挙動の観察, 発表奨励賞, 第4回窒化物半導体結晶成長学会
Winner: 徳本有紀, 沓掛健太朗, 大野裕, 米永一郎
 

Published Papers

 
Fabrication of diamond/Cu direct bonding for power device applications
S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, J. Liang
Japanese Journal of Applied Physics   59    2019   [Refereed]
Impact of focused ion beam on structural and compositional analysis of interfaces fabricated by surface activated bonding
Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, Y. Nagai, J. Liang, N. Shigekawa
Japanese Journal of Applied Physics   59    2019   [Refereed]
I. Yonenaga, M. Deura, Y. Tokumoto, K. Kutsukake, Y. Ohno
Journal of Crystal Growth   500 23-28   Aug 2018   [Refereed]
Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga
Applied Physics Express   11 061303/1-061303/4   May 2018   [Refereed]
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Japanese Journal of Applied Physics   57 02BA01/1-02BA01/3   Feb 2018   [Refereed]
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
Physica Status Solidi B   255 1700473/1-1700473/4   2018   [Refereed]
R. Miyagawa, Y. Ohno, M. Deura, I. Yonenaga, O. Eryu
Japanese Journal of Applied Physics   57    2018   [Refereed]
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Journal of Microscopy   226(3) 230-238   Dec 2017   [Refereed]
Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Applied Physics Letters   110 062105/1-062105/5   Feb 2017   [Refereed]
M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi
Japanese Journal of Applied Physics Rapid Communications   56(3) 030301/1-030301/4   Jan 2017   [Refereed]
Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
Applied Physics Letters   109 142105/1-142105/4   Jul 2016   [Refereed]
K. Kutsukake, M. Deura, Y. Ohno, I. Yonenaga
Japanese Journal of Applied Physics   54 08KD10/1-08KD10/5   Jul 2015   [Refereed]
I. Yonenaga, Y. Ohkubo, M. Deura, K. Kutsukake, Y. Tokumoto, Y. Ohno, A. Yoshikawa, and X. Q. Wang
AIP Advances   5 077131/1-077131/13   Jul 2015   [Refereed]
Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai
Applied Physics Letters   106 251603/1-251603/4   Jul 2015   [Refereed]
Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otsubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
Physical Review B   91 235315/1-235315/5   Jun 2015   [Refereed]
Y.Yamamoto, K. Togase, Y. Ohno, I. Yonenaga, S. R. Nishitani
Japanese Journal of Applied Physics   53 061302/1-061302/4   Jun 2014   [Refereed]
Y. Ohno, I. Yonenaga
Applied Surface Science   302 29-31   Mar 2014   [Refereed]
I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno
Journal of Crystal Growth   395 94-97   Mar 2014   [Refereed]
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
IEEE Journal of Photovoltaics   4(1) 84-87   Jan 2014   [Refereed]
I. Yonenaga, Y. Ohno, T. Yao, K. Edagawa
Journal of Crystal Growth   403 72-76   2014   [Refereed]
T. Walther, M. Hopkinson, N. Daneu, A. Recnik, Y. Ohno, K. Inoue, I. Yonenaga
Journal of Materials Science   49(11) 3898-3908   Dec 2013   [Refereed]
Y. Ohno, I. Yonenaga
Journal of Crystal Growth   393 171-174   Dec 2013   [Refereed]
Y. Ohno, H. Koizumi, Y. Tokumoto, K. Kutsukake, H. Taneichi, I. Yonenaga
Journal of Crystal Growth   393 119-122   Nov 2013   [Refereed]
K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh, I. Yonenaga
Journal of Crystal Growth   393 45-48   Oct 2013   [Refereed]
T. Taishi, Y. Ohno, I. Yonenaga
Journal of Crystal Growth   393 42-44   Oct 2013   [Refereed]
Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
Applied Physics Letters   103(10) 102102/1-102102/4   Sep 2013   [Refereed]
A. Uedono, I. Yonenaga, T. Watanabe, S. Kimura, N. Oshima, R. Suzuki, S. Ishibashi, Y. Ohno
Journal of Applied Physics   114(8) 084506/1-084506/6   Aug 2013   [Refereed]
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga
Applied Physics Express   6(1) 025505/1-025505/3   Jan 2013   [Refereed]
K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, M. Suezawa, I. Yonenaga
Journal of Applied Physics   113(7) 073501/1-073501/5   Jan 2013   [Refereed]
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Journal of Applied Physics   112(12) 129902   Dec 2012   [Refereed]
Y. Ohno
Applied Physics Express   5(12) 125204/1-125204/3   Dec 2012   [Refereed]
Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Journal of Applied Physics   112(9) 093526/1-093526/6   Nov 2012   [Refereed]
J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa, I. Yonenaga
physica status solidi (a)   209(10) 1902-1907   Oct 2012   [Refereed]
Y. Tokumoto, H.-J. Lee, Y. Ohno, T. Yao, I. Yonenaga
Materials Transactions   53(11) 1881-1884   Sep 2012   [Refereed]
K. Kutsukake, H. Ise, Y. Tokumoto, Y. Ohno, I. Yonenaga
Journal of Crystal rowth   352(1) 173-176   Aug 2012   [Refereed]
Y. Ohno, Y. Tokumoto, H. Taneichi, I. Yonenaga, K. Togase, S. R. Nishitani
Physica B   407 3006-3008   Aug 2012   [Refereed]
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao, N. Yamamoto
Physica B   407(15) 2886-2888   Aug 2012   [Refereed]
I. Yonenaga, T. Taishi, H. Ise, Y. Murao, K. Inoue, T. Ohsawa, Y. Tokumoto, Y. Ohno, Y. Hashimoto
Physica B   407(15) 2932-2934   Aug 2012   [Refereed]
Y. Ohno, I. Yonenaga, K. Miyao, K. Maeda, H. Tsuchida
Applied Physics Letters   101(4) 042102/1-042102/3   Jul 2012   [Refereed]
Y. Ohno, Y. Tokumoto, I. Yonenaga, K. Fujii, T. Yao
Journal of Applied Physics   111(11) 113514/1-113514/6   Jun 2012   [Refereed]
Y. Ohno, Y. Tokumoto, I. Yonenaga
Thin Solid Films   520 3296-3299   Feb 2012   [Refereed]
Y. Tokumoto, H.J. Lee, Y. Ohno, T. Yao, I. Yonenaga
Journal of Crystal Growth   334 80-83   Nov 2011   [Refereed]
Y. Murao, T. Taishi, Y. Tokumoto, Y. Ohno, I. YOnenaga
Journal of Applied Physics   109(11) 113502/1-113502/5   Jun 2011   [Refereed]
T. Taishi, H. Ise, Y. Murao, T. Osawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
Microelectronic Engineering   88(4) 496-498   Apr 2011   [Refereed]
I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto, H. Makino, T. Yao, Y. Kamimura, K. Edagawa
Journal of Crystal Growth   318(1) 415-417   Mar 2011   [Refereed]
H. Kohno, T. Nogami, S. Takeda, Y. Ohno, I. Yonenaga, and S. Ichikawa
Journal of Nanoscience and Nanotechnology   10(10) 6655-6658   Oct 2010   [Refereed]
Y. Ohno, T. Taishi, Y. Tokumoto, I. Yonenaga
Journal of Applied Physics   108(7) 073514/1-073514/4   Oct 2010   [Refereed]
T. Taishi, H. Ise, Y. Murao, T. Osawa, M. Suezawa, Y. Tokumoto, Y. Ohno, K. Hoshikawa, I. Yonenaga
Journal of Crystal Growth   312 2783-2787   Sep 2010   [Refereed]
Y. Ohno
Journal of Electron Microscopy   59(S1) S141-S147   Jun 2010   [Refereed]
A. Hara, T. Awano, Y. Ohno, I. Yonenaga
Japanese Journal of Applied Physics   49 050203/1-050203/3   May 2010   [Refereed]
I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto
Journal of Crystal Growth   312 1065-1068   Apr 2010   [Refereed]
H. Kohno, Y. Mori, S. Takeda, Y. Ohno, I. Yonenaga, S. Ichikawa
Applied Physics Express   3 055001/1-055001/3   Apr 2010   [Refereed]
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
Thin Solid Films   518(9) 2409-2412   Feb 2010   [Refereed]
H. Kohno, Y. Mori, S. Ichikawa, Y. Ohno, I. Yonenaga, aS. Takeda
Nanoscale   1    Sep 2009   [Refereed]
Y. Ohno, T. Shirakawa, T. Taishi, I. Yonenaga
Applied Physics Letters   95(9) 091915/1-091915/3   Sep 2009   [Refereed]
I. Yonenaga, Y. Ohno, T. Taishi, Y. Tokumoto
Physica B   404(23-24) 4999-5001   Sep 2009   [Refereed]
T. Taishi, Y. Ohono, I. Yonenaga
Journal of Crystal Growth   311(22) 4615-4618   Sep 2009   [Refereed]
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
Physica B   404(23-24) 4612-4615   Aug 2009   [Refereed]
Y. Ohno, T. Taishi, I. Yonenaga
physica status solidi (a)   206(8) 1904-1911   Aug 2009   [Refereed]
T. Nogami, Y. Ohno, S. Ichikawa, H. Kohno
Nanotechnology   20 335602/1-335602/5   Jul 2009   [Refereed]
T. Taishi, Y. Murao, Y. Ohno, I. Yonenaga
Journal of Crystal Growth   311(1) 59-61   Dec 2008   [Refereed]
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
Journal of Applied Physics   104 073515/1-073515/6   Oct 2008   [Refereed]
I. Yonenaga, H. Koizumi, Y. Ohno,T. Taishi
Journal of Applied Physics   103 093502/1-093502/4   May 2008   [Refereed]
Y. Ohno, K. Shoda, T. Taishi, I. Yonenaga, S. Takeda
Applied Surface Science   254(23) 7633-7637   Feb 2008   [Refereed]
Y. Ohno, H. Koizumi, T. Taishi, I. Yonenaga, K. Fujii, H. Goto, T. Yao
Applied Physics Letters   92(1) 011922/1-011922/3   Jan 2008   [Refereed]
I. Yonenaga, K. Takahashi, T. Taishi, Y. Ohno
Physica B   401 148-150   Dec 2007   [Refereed]
T. Taishi, Y. Ohno, I. Yonenaga, K. Hoshikawa
Physica B   401 560-563   Dec 2007   [Refereed]
T. Taishi, T. Hayashi, N. Bamba, Y. Ohno, I. Yonenaga, K. Hoshikawa
Physica B   401 437-440   Dec 2007   [Refereed]
Y. Ohno, R. Hirai, S. Ichikawa, T. Taishi, I. Yonenaga, S. Takeda
Physica B   401 650-653   Dec 2007   [Refereed]
Y. Ohno, N. Yamamoto, T. Taishi, I. Yonenaga, S. Takeda
Physica B   401 270-274   Dec 2007   [Refereed]
Y. Ohno, T. Taishi, I. Yonenaga, S. Takeda
Physica B   401 230-233   Dec 2007   [Refereed]
K. Torigoe, Y. Ohno, H. Kohno, T. Ichihashi, S. Takeda
Surface Science   601 5103-5107   Nov 2007   [Refereed]
Y. Ohno, N. Yamamoto, K. Shoda, S. Takeda
Japanese Journal of Applied Physics: Express Letter   46 L830-L832   Sep 2007   [Refereed]
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
Solid State Communications   141 228-232   Jan 2007   [Refereed]
Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
Japanese Journal of Applied Physics   46 434-439   Jan 2007   [Refereed]
Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
Journal of Applied Physics   99 126107/1-126107/3   Jun 2006   [Refereed]
Y. Ohno
Physica B   376-377 845-848   Apr 2006   [Refereed]
Y. Ohno
Japanese Journal of Applied Physics   45 2357-2360   Mar 2006   [Refereed]
K. Torigoe, Y. Ohno, T. Ichihashi, S. Iijima, S. Takeda
Physica B   376-377 916-919   Jan 2006   [Refereed]
Y. Ohno
Applied Physics Letters   87 181909/1-181909/3   Oct 2005   [Refereed]
N. Ozaki, Y. Ohno, J. Kikkawa, S. Takeda
Journal of Electron Microscopy   54 I25-I29   Sep 2005   [Refereed]
Y. Ohno
Physical Review B   72 121307/1-121307/4   Sep 2005   [Refereed]
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
Applied Physics Letters   87 43105/1-43105/3   Jul 2005   [Refereed]
J. Kikkawa, Y. Ohno, S. Takeda
Applied Physics Letters   86 123109/1-123109/3   Mar 2005   [Refereed]
H. Kohno, H. Yoshida, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka, S. Takeda
Thin Solid Films   464-465 204-207   Oct 2004   [Refereed]
Y. Ohno, N. Adachi, S. Takeda
Applied Physics Letters   83 54-56   Jul 2003   [Refereed]
S. Takeda, K. Ueda, N. Ozaki, Y. Ohno
Applied Physics Letters   82 979-981   Feb 2003   [Refereed]
J. Yamasaki, Y. Ohno, S. Takeda, Y. Kimura
Philosophical Magazine   83 151-163   Jan 2003   [Refereed]
Y. Ohno, S. Takeda
Journal of Electron Microscopy   51 281-290   Sep 2002   [Refereed]
J. Yamasaki, Y. Ohno, H. Kohno, N. Ozaki, S. Takeda
Journal of non-crystalline solids   299-302 793-797   Apr 2002   [Refereed]
Y. Ohno, N. Ozaki, S. Takeda
Physica B   308-310 1222-1225   Dec 2001   [Refereed]
N. Ozaki, Y. Ohno, M. Tanbara, D. Hamada, J. Yamasaki, S. Takeda
Surface Science   493 547-554   Nov 2001   [Refereed]
M. Aki, Y. Ohno, H. Kohno, S. Takeda
Philosophical Magazine A   80 747-758   Mar 2000   [Refereed]
A. Ihara, Y. Ohno, S. Takeda, S. Nagao, D. Diffily, Y. Satoh, K. Shimoyama, N. Hosoi
Physica B   273-274 1050-1053   Dec 1999   [Refereed]
Y. Ohno, Y. Kawai, S. Takeda
Physical Review B   59 2694-2699   Jan 1999   [Refereed]
N. Ozaki, Y. Ohno, S. Takeda
Applied Physics Letters   73 3700-3702   Dec 1998   [Refereed]
Y. Ohno, N. Saitoh, S. Takeda, M. Hirata
Japanese Journal of Applied Physics   36 5628-5632   Sep 1997   [Refereed]
Y. Ohno, M. Hirata, S. Takeda, R. Fujimoto, R. Oshima
Journal of Electron Microscopy   45 380-387   Oct 1996   [Refereed]
Y. Ohno, S. Takeda, M. Hirata
Physical Review B   54 4642-4649   Aug 1996   [Refereed]
Y. Ohno, S. Takeda
Journal of Electron Microscopy   45 73-78   Feb 1996   [Refereed]

Misc

 
Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration      Jun 2019
Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
Y. Ohno, H. Yoshida, M Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration      Jun 2019
Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
Proceedings of the 6th International IEEE Workshop on Low Temperature Bonding for 3D Integration      Jun 2019
Origin of resistance at Si/GaAs heterointerfaces for tandem solar cells fabricated by surface-activated bonding at room temperature
OHNO Yutaka
KINKEN Research Highlights 2018   18   Jul 2018   [Invited]
Mechanism of Oxygen Segregation at Grain Boundaries in Silicon
Y. Ohno
KINKEN Research Highlights 2017   17   Jul 2017
Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Proceedins of the 5th International IEEE Workshop on Low Temperature Bonding for 3D Integration   4   Jun 2017
TEM-CL分光法による電子材料中のナノ構造の電子状態評価
大野裕
顕微鏡   50 185-190   Dec 2015
Cu Precipitation Conditions at Small Angle Tilt Boundaries in Si
Y. Ohno
KINKEN Research Highlights 2015   21   Aug 2015
InNの硬度とヤング率
大久保泰, 出浦桃子, 徳本有紀, 沓掛健太朗, 大野裕, 米永一郎
IEICE Technical Report   114 45-48   Nov 2014
Formation of thermal double donors in Ge
K. Inoue, T. Taishi, Y. Murao, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
JPS Conference Proceedings   1 012082/1-012082/4   Mar 2014
太陽電池用の擬似単結晶シリコンインゴットの育成
沓掛健太朗, 宇佐美徳隆, 大野裕, 徳本有紀, 米永一郎
技術総合誌OHM 2013年6月号   8-9   Jun 2013
徳本有紀, 李賢宰、大野裕, 八百隆文, 米永一郎
まてりあ   52 273-277   Jun 2013
Growth of dilute GeSn alloys
Y Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno, I. Yonenaga
Proceedings of the 7th International Workshop on Modeling of Crystal Growth   130-131   2012
Czochralski growth of highly In doped Si -Effect of co-doping of C and Ge-
K. Inoue, Y. Ohno, K. Kutsukake, Y. Tokumoto, I. Yonenaga
Proceedings of the 7th International Workshop on Modeling of Crystal Growth   132-133   2012
K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno, I. Yonenaga
Key Engineering Materials   508 220-223   2012
Dislocation activities in Si under high-magnetic-field
I. Yonenaga, Y. Ohno, Y. Tokumoto, K. Kutsukake
Proceedings of the 4th International Conference on Fundamental Properties of Dislocations   29-32   2012
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno, I. Yonenaga
Journal of Physics: Conference Series   281(1) 012011/1-012011/6   Jan 2011
半導体ナノ機能を直視する
Y. Ohno
IMR news KINKEN   64    2011
Doping effects on the stacking fault energy in silicon
Y. Ohno
KINKEN Research Highlights 2011      2011
Formation of nanotubes of carbon by Joule heating of carbon-coated Si nanochain
H. Kohno, Y. Ohno
KINKEN Research Highlights 2010      2010
Czochralski growth of Ge crystal from the melt partially covered by B2O3 liquid
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno
Proceedings of the Forum on the Science and Technology of Silicon Materials 2010   28-33   2010
Evaluation of oxygen impurities in Ge crystals Czochralski-grown from melts partially or fully covered by B2O3 liquid
T. Taishi, Y. Hashimoto, H. Ise, Y. Murao, T. Ohsawa, Y. Tokumoto, Y. Ohno
Proceedings of the Forum on the Science and Technology of Silicon Materials 2010   426-432   2010
T. Taishi, K. Hoshikawa, Y. Ohno, I. Yonenaga
physica status solidi (c)   6(8) 1886-1891   Jun 2009
Y. Akaki, Y. Shirahata, K. Yoshino, Y. Ohno, and I. Yonenaga
physica status solidi (c)   6(5) 1043-1046   Apr 2009
Boron and phosphorus segregation in Si-rich SixGe1-x (0.89 < x < 0.96)
I. Yonenaga, T. Ayuzawa, T. Taishi, Y. Ohno
15th International Conference on Crystal Growth Proceedings      2009
Optical properties of dislocations in wurtzite ZnO bulk single crystals introduced at elevated temperatures
Y. Ohno
KINKEN Research Highlights 2009      2009
大野裕, 太子敏則, 徳本有紀, 米永一郎
まてりあ   48    2009
透過電子顕微鏡内その場分光装置の開発とその応用
大野裕
大阪大学低温センターだより   143 22-26   Jul 2008
T. Taishi, I. Yonenaga, S. Takeda
Physica Status Solidi (c)   5(9) 2944-2946   May 2008
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
AIP Conference Proceedings   893 115-116   Apr 2007
TEM内偏光CL分光法および劈開STM法によるGaP/InP短周期超格子の電子状態解析
大野裕
まてりあ   45    Dec 2006
Formation mechanism of silicon surface nanoholes
Y. Ohno, S. Takeda, T. Ichihashi, S. Iijima
The 16th International Microscopy Congress, Proceedings   /1   Sep 2006
Microstructure and optical properties of ZnSe nanowires grown on .ZnSe(001) with Fe catalysts
Y. Ohno, T. Shirahama, S. Takeda, A. Ishizumi, Y. Kanemitsu
The 16th International Microscopy Congress, Proceedings   /1   Sep 2006
Quantitative analysis of optical polarization in semiconductor nanostructures by polarized cathodoluminescence spectroscopy in a transmission electron microscope
Y. Ohno, S. Takeda
The 16th International Microscopy Congress, Proceedings   /1   Sep 2006
Controlled arrangement of gold nanoparticles on silicon surfaces using high-energy electron beam
K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
The 16th International Microscopy Congress, Proceedings   /1   Sep 2006
Growth Property of Silicon Nanowires
J. Kikkawa, Y. Ohno, S. Takeda
The 16th International Microscopy Congress, Proceedings   /1   Sep 2006
Nucleation and growth processes of silicon nanowires
S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa, Y. Ohno
JSPS-141 Activity Report   636-643   Jul 2006
Light emission from AlGaAs epitaxial layers including twin boundaries revealed by cathodoluminescence spectroscopy in a transmission electron microscope
Y. Ohno, K. Shoda, S. Takeda, N. Yamamoto
JSPS-141 Activity Report   596   Jul 2006
Growth rate and critical diameter of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
Frontiers of Basic Science towardsNew Physics, Earth and Space Science, and Mathematics   253-254   2005
Size Distribution of Gold Nanoparticles Arranged on Inhomogeneously Roughened Silicon
K. Torigoe, Y. Ohno, S. Takeda
Frontiers of Basic Science towardsNew Physics, Earth and Space Science, and Mathematics   335-336   2005
Localized energy levels associated with dislocations in ZnSe revealed by polarized CL spectroscopy under light illumination
Y. Ohno
Springer Proceedings in Physics   107 507-510   2005
Atomistic structure of spontaneously-ordered GaInP alloy revealed by cross-sectional scanning tunneling microscopy and polarized cathodoluminescence spectroscopy
Y. Ohno
Springer Proceedings in Physics   107 483-486   2005
Dynamics of Au Adatoms on Electron-Irradiated Rough Si Surfaces
K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
Springer Proceedings in Physics   107 393-396   2005
Analysis of growth rate of silicon nanowires
J. Kikkawa, Y. Ohno, S. Takeda
Materials Research Society 2004 Fall Meeting, Proceedings   832 F7.25.1-F7.25.6   2005
Nucleation and growth processes of silicon nanowires
S. Takeda, N. Ozaki, K. Ueda, H. Kohno, J. Kikkawa, Y. Ohno
Materials Research Society 2004 Fall Meeting, Proceedings   832 F9.1.1-F9.1.11   2005
ZnSe/GaAsエピタキシャル膜への積層欠陥の形成機構
大野裕, 足立直人, 竹田精治
材料開発のための顕微鏡法と応用写真集 (日本金属学会編)   193   2005
Growth of Au clusters in electron-irradiated rough Si surfaces
K. Torigoe, Y. Ohno, T. Ichihashi, S. Takeda
3rd International Symposium on Scientific and Industrial Nanotechnology, Proceedings   175   2004
Formation and properties of silicon/silicide/oxide nanochains
H. Kohno, Y. Ohno, S. Ichikawa, T. Akita, K. Tanaka, S. Takeda
Materials Research Society 2003 Fall Meeting, Proceedings   789 N11.18.1-N11.18.6   2004
Formation mechanism of the pairs of stacking faults in pseudomorphic ZnSe epilayers on GaAs substrates
Y. Ohno, N. Adachi, S. Takeda
Institute of Physics Conference Series   180 187-190   2004
Quantitative analysis of linear polarization by means of polarized cathodolumineseence spectroscopy in a TEM
Y. Ohno, S. Takeda
Institute of Physics Conference Series   180 569-572   2004
Formation of extended defects in polycrystalline SiGe by electron irradiation
J. Kikkawa, J. Yamasaki, Y. Ohno, M. Kohyama, S. Takeda
Solid State Phenomena   93 361-366   2003
自己組織化作用によるシリコン表面ナノ穴形成
竹田精治, 大野裕
マテリアルステージ   39-42   2002
Formation process of silicon surface nanoholes
Y. Ohno, S. Takeda
Institute of Physics Conference Series   169 395-398   2001
Control of the arrangement of nanoholes on silicon surface
Y. Ohno, S. Takeda
Materials Research Society 2000 Fall Meeting, Proceedings   638 F14.36.1-F14.36.6   2001
Optical properties of Si nanowires on a Si (111) surface
N. Ozaki, Y. Ohno, S. Takeda
Materials Research Society 1999 Fall Meeting, Proceedings   588 99-103   2000
Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2
Y. Ohno, S. Takeda
Materials Research Society 1999 Fall Meeting, Proceedings   588 105-110   2000
Formation of microcracks in an annealed cubic boron nitride
M. Aki, Y. Ohno, S. Takeda
Institute of Physics Conference Series   164 93-96   2000
Formation model for microstructures in a (Al, Ga, In)P natural superlattice
Y. Kuno, S. Takeda, M. Hirata, Y. Ohno, N. Hosoi, K. Shimoyama
Institute of Physics Conference Series   164 287-290   2000
VLS growth of Si nanowhiskers on a H-terminated Si surface
N. Ozaki, Y. Ohno, S. Takeda, M. Hirata
Materials Research Society 1998 Fall Meeting, Proceedings   536 305-310   2000
III-V族化合物半導体中における点欠陥の電子励起誘起反応
大野裕
大阪大学低温センターだより   105 7-11   Jan 1999
Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope
Y. Ohno, S. Takeda
Institute of Physics Conference Series   164 175-178   1999
Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy
Y. Ohno, Y. Kawai, S. Takeda
10-th Conference on Semiconducting and Insulating Materials, Proceedings   173-176   1998
竹田精治, 大野裕
電子顕微鏡   32 107-109   1997
Diffusion process of interstitial atoms in InP studied by transmission electron microscopy
Y. Ohno, S. Takeda, M. Hirata
Materials Research Society 1996 Fall Meeting, Proceedings   442 435-440   1997
Clustering process of point defects in GaP studied by transmission electron microscopy
Y. Ohno, S. Takeda, M. Hirata
Materials Science Forum   196-201 1279-1283   1995
In-situ TEM-PL Study of Lattice Defects in CVD-diamond
Y. Ohno, S. Takeda, M. Hirata
Proceedings of the 13-th International Conference on Electron Microscopy   829-830   1994
HRTEM study of the (111) planar defect
Y. Ohno, S. Takeda, M. Hirata
Institute of Physics Conference Series   134 527-530   1993

Books etc

 
In-situ Electron Microscopy
Y. Ohno, S. Takeda (Part:Joint Work, Chapter 13; Cathodoluminiscence in Scanning and Transmission Electron Microscopies, pp 303-319)
WILEY-VCH   Apr 2012   ISBN:3-527-31973-5
Optoelectronic Devices and Properties
Y. Ohno, I. Yonenaga, S. Takeda (Part:Joint Work, In-situ analysis of optoelectronic properties of semiconductor nanostructures and defects in transmission electron microscopes)
INTECH   Mar 2011   ISBN:978-953-307-511-2

Conference Activities & Talks

 
Atomistic structure of Si/GaAs heterointerfaces fabricated by surface activated bonding revealed by STEM combined with low-temperature FIB
Y. Ohno, Y. Shimizu, Y. Nagai, R. Aso, N. Kamiuchi, H. Yoshida, J. Liang, N. Shigekawa
Materials Research Society (MRS) 2019 Fall Meeting   2 Dec 2019   
Oxygen segregation at imperfect low-Σ tilt boundaries in Si for solar cells
Y. Ohno, T. Tamaoka, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai, K. Kutsukake
18th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XVIII)   10 Sep 2019   
Multi-scale analysis of dislocation generation during the cast-growth of high-performance multicrystalline Si ingots by using PL imaging and TEM
Y. Ohno, K. Tajima, N. Usami, K. Kutsukake
18th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XVIII)   9 Sep 2019   
Compositional nanoanalysis at grain boundaries in Si by atom probe tomography combined with FIB operated at low temperatures
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Kamiuchi, R. Aso, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Europian Conference and Exhibition on Advanced Material and Processed (EUROMAT2019)   3 Sep 2019   
Impurity segregation at misoriented Σ3{111} tilt boundariess in high-performance Si
Y. Ohno, T. Tamaoka, H. Yoshida, S. Takeda, Y. Shimizu, Y. Nagai, K. Kutsukake
19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)   30 Jul 2019   
Characterization of lineages in Czochralski-grown LiTaO3 ingots by differential interference contrast microscopy of dislocation etch pits
Y. Ohno, Y. Kubouchi, T. Kajigaya
19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)   29 Jul 2019   
Structural variety and segregation ability of Σ9 grain boundaries in Si
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
30th International Conference on Defects in Semiconductors (ICDS30)   25 Jul 2019   
Impact of focused ion beam in the structural analysis of semiconductor interfaces fabricated by surface activated bonding
Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
30th International Conference on Defects in Semiconductors (ICDS30)   23 Jul 2019   
Impact of polymorphic nanostructures at grain boundaries on segregation ability; for asymmetric Σ9{111}/{115} tilt boundaries in silicon
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga
Intergranular and Interphase Boundaries in Materials 2019 (IIB2019)   2 Jul 2019   
Impact of misorientation at symmetric grain boundaries on segregation ability; for Σ3{111} tilt boundaries in Si
Y. Ohno, K. Kutsukake, T. Tamaoka, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, N. Usami
Intergranular and Interphase Boundaries in Materials 2019 (IIB2019)   1 Jul 2019   
Direct bonding of diamond and dissimilar materials for power device applications [Invited]
J. Liang, Y. Shimizu, Y. Ohno, N. Ebisawa, S. Kenji, Y. Nagai, M. Kasu, N. Shigekawa
2019 International Symposium on Single Crystal Diamond and Electronics (SCDE 2019)   10 Jun 2019   
Impact of asymmetric grain boundaries on conversion efficiency in Si solar cells [Invited]
Y. Ohno
Collaborative conference on Materials Research 2019 (CCMR-2019)   5 Jun 2019   
Chemical nanoanalysis at Si grain boundaries by atom probe tomography combined with FIB operated at low temperatures
Y. Ohno, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, J. Liang, N. Shigekawa
European Materials Research Society (EMRS) 2019 Spring Meeting   27 May 2019   
Fabrication of Diamond/Cu Direct Bonding for Power Device Application
S. Kanda, S. Masuya, M. Kasu, Y. Ohno, Y. Shimizu, N. Shigekawa, J. Liang
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)   23 May 2019   
Atom probe tomography of GaAs homointerfaces fabricated by surface-activated bonding
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)   23 May 2019   
Artifacts in the structural analysis of SAB-fabricated interfaces by using focused ion beam
Y. Ohno, H. Yoshida, N. Kamiuchi, R. Aso, S. Takeda, Y. Shimizu, N. Ebisawa, Y. Nagai, J. Liang, N. Shigekawa
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)   23 May 2019   
Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)   21 May 2019   
Direct bonging of diamond and Cu at room temperature for power devise application
J. Liang, S. Kanda, S. Masuya, M. Kasu, Y. Ohno, Y. Shimizu, N. Shigekawa
13th New Diamond and Nano Carbons Conference (NDNC2019)   13 May 2019   
Two-dimensional polymorphic {111}/{115} grain boundaries in Si - Atomistic structure and impurity segregation ability -
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
Materials Research Society (MRS) 2019 Spring Meeting   24 Apr 2019   
Two-dimensional polymorphic structure on {111}/{115} grain boundaries in Si
Y. Ohno, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
21st International Conference on Microscopy of Semiconducting Materials (MSM-XXI)   10 Apr 2019   
Impurity segregation at Si/GaAs heterointerfaces fabricated by surface-activated bonding analyzed by atom probe tomography
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
Materials Research Society (MRS) 2018 Fall Meeting   27 Nov 2018   
Generation and propagation of defects in multicrystalline silicon for solar cells [Invited]
K. Kutsukake, Y. Hayama, H. Kudo, T. Matsumoto, T. Yokoi, Y. Ohno, N. Usami
8th Forum on the Science and Technology of Silicon Materials 2018   21 Nov 2018   
Atom probe study of impurity distribution at Si/GaAs heterointerfaces fabricated by surface-activated bonding
Y. Shimizu, N. Ebisawa, Y. Ohno, J. Liang, N. Shigekawa, K. Inoue, Y. Nagai
Summit of Materials Science 2018   29 Oct 2018   
Chemical nanoanalyses at grain boundaries by atom probe tomography with TEM and ab-initio calculations [Invited]
BIT's 8th Annual World Congress of Nano Science \& Technology-2018 (Nano S&T-2018)   24 Oct 2018   
Grain boundary segregation in silicon: nanoscopic mechanism and applications [Invited]
International Conference on Condensed-Matter and Material Science (ICCMS2018)   20 Jun 2018   
データ科学を活用した材料創製・材料評価に向けて
沓掛健太朗, 宇佐美徳隆, 工藤博章, 横井達矢, 羽山裕介, 井上憲一
日本金属学会2018年春期(第162回)講演大会   19 Mar 2018   
分野融合で始まる欠陥研究の新時代 -学会を越えた視点から見えてくるもの-
沓掛健太朗, 中村篤智
第65回応用物理学会春季学術講演会   17 Mar 2018   
ドーピングレベルに依存するSi中の積層欠陥とNa原子の相互作用
森戸春彦, 沓掛健太朗, 米永一郎, 横井達也, 中村篤智, 松永克志
第65回応用物理学会春季学術講演会   17 Mar 2018   
LiTaO3結晶中の小傾角粒界に並ぶ転位の解析(Ⅰ)-X線トポグラフ像とエッチピット像の対応-
梶ヶ谷富男, 窪内裕太
第65回応用物理学会春季学術講演会   17 Mar 2018   
LiTaO3結晶中の小傾角粒界に並ぶ転位の解析(Ⅱ)-透過電子顕微鏡を用いた転位の同定-
窪内裕太, 梶ヶ谷富男
第65回応用物理学会春季学術講演会   17 Mar 2018   
Structural properties of low-resistance Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Energy, Materials, and Nanotechnology Photovoltaics Meeting 2018   15 Jan 2018   
Polymorphism of asymmetric Σ9{111}/{115} interfaces in silicon
K. Kutsukake, H. Yoshida, S. Takeda, T. Yokoi, A. Nakamura, K. Matsunaga
Materials Research Society 2017 Fall Meeting   26 Nov 2017   
Origin of the resistance at Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
Materials Research Society 2017 Fall Meeting   26 Nov 2017   
Evaluation of mechanical properties of cubic-BN(111) bulk single crystal using nanoindentation
M. Deura, K. Kutsukake, I. Yonenaga, T. Taniguchi
第36回電子材料シンポジウム   8 Nov 2017   
TEM-アトムプローブ複合法によるシリコン粒界における酸素の偏析機構の解明
井上海平, 沓掛健太朗, 出浦桃子, 米永一郎, 清水康雄, 井上耕治, 海老澤直樹, 永井康介, 吉田秀人, 竹田精治, 田中真悟, 香山正憲
東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター 平成29年度大洗研究会   4 Oct 2017   
TEM observation of femtosecond-laser-induced periodic structures on SiC substrates
R. Miyagawa, M. Deura, I. Yonenaga, O. Eryu
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)   17 Sep 2017   
シリコン結晶における不純物の粒界偏析 -微視的描像と機能-
第78回応用物理学会秋季学術講演会   5 Sep 2017   
室温表面活性化接合で作成したSi/GaAs界面の熱処理による構造変化
吉田秀人, 竹田精治, 梁剣波, 重川直輝
第78回応用物理学会秋季学術講演会   5 Sep 2017   
データ科学的手法による効率的なマッピング(3):測定点移動距離の検討
沓掛健太朗, 菊地亮太, 下山幸治
第78回応用物理学会秋季学術講演会   5 Sep 2017   
Mechanism of oxygen segregation at tilt boundaries in Si
K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
29th International Conference on Defects in Semiconductors (ICDS2017)   31 Jul 2017   
Mechanical properties of cubic-BN bulk single crystal evaluated by nanoindentation
M. Deura, K. Kutsukake, I. Yonenaga, T. Taniguchi
12th International Conference on Nitride Semiconductors   24 Jul 2017   
多結晶材料情報学によるスマートシリコンインゴットの創製に向けて
宇佐美徳隆, 羽山優介, 高橋勲, 松本哲也, 工藤博章, 横井達矢, 松永克志, 沓掛健太朗
独立行政法人日本学術振興会次世代の太陽光発電システム第175委員会 第14回「次世代の太陽光発電システム」シンポジウム   20 Jul 2017   
データ科学的手法を用いた効率的なマッピングの提案
沓掛健太朗,菊地亮太,出浦桃子,下山幸治,米永一郎
独立行政法人日本学術振興会次世代の太陽光発電システム第175委員会 第14回「次世代の太陽光発電システム」シンポジウム   20 Jul 2017   
フェムト秒レーザー誘起周期構造の結晶性評価
宮川鈴衣奈, 出浦桃子, 米永一郎, 江龍修
第9回 ナノ構造・エピタキシャル成長講演会   13 Jul 2017   
3次元アトムプローブ-TEM複合法によるSi中の格子間酸素の粒界偏析評価
井上海平, 藤原航三, 沓掛健太朗, 出浦桃子, 米永一郎, 海老澤直樹, 清水康雄, 井上耕治, 永井康介, 吉田秀人, 竹田精治, 田中真悟, 香山正憲
日本顕微鏡学会第73回学術講演会   30 May 2017   
平面TEM観察による表面活性化接合Si/GaAs界面の評価
吉田秀人, 竹田精治, 梁剣波, 重川直輝
日本顕微鏡学会第73回学術講演会   30 May 2017   
データ科学的手法を用いた効率的なマッピングの提案
沓掛健太朗,菊地亮太,出浦桃子,下山幸治,米永一郎
金属材料研究所第133回講演会   26 May 2017   
Chemical nanoanalyses at grain boundaries by joint use of atom probe tomography and TEM combined with ab-initio calculations
K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
European Materials Research Society 2017 Spring Meeting   21 May 2017   
Atomistic structure of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
European Materials Research Society 2017 Spring Meeting   21 May 2017   
Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
2017 5th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017)   16 May 2017   
Structural properties of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature
J. Liang, N. Shigekawa
Materials Research Society 2017 Spring Meeting   17 Apr 2017   
Dislocations on Σ5{013} grain boundaries in mono-cast Si; atomistic structure and effects on mechanical properties
K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai
Materials Research Society 2017 Spring Meeting   17 Apr 2017   
Grain boundary segregation in Si studied by atom probe tomography combined with TEM and ab-initio calculations
20th International Conference on Microscopy of Semiconducting Materials   9 Apr 2017   
半導体における粒界・転位機能-Si粒界の偏析特性とワイドギャップ半導体の転位特性を中心として-
日本金属学会・日本鉄鋼協会東海支部 第71回若手材料研究会「格子欠陥研究の最前線」   24 Mar 2017   
モノライクシリコンにおける不純物の粒界偏析機構
沓掛健太朗, 出浦桃子, 米永一郎, 清水康雄, 井上耕治, 海老澤直樹, 永井康介,吉田秀人,竹田精治
日本物理学会第72回年次大会   17 Mar 2017   
シリコン中の傾角粒界における酸素の偏析機構
井上海平, 藤原航三, 沓掛健太朗, 出浦桃子, 米永一郎, 海老澤直樹, 清水康雄, 井上耕治, 永井康介,吉田秀人,竹田精治, 田中真悟, 香山正憲
第64回応用物理学会春季学術講演会   14 Mar 2017   
常温で表面活性化接合したSi/GaAs界面の原子・電子構造
吉田秀人,竹田精治, 梁剣波, 重川直輝
第64回応用物理学会春季学術講演会   14 Mar 2017   
X線トポグラフィーを用いたLiTaO3結晶に存在する欠陥の三次元解析
窪内裕太, 梶ヶ谷富男, 杉山正史, 川村祥太郎, 米永一郎
第64回応用物理学会春季学術講演会   14 Mar 2017   
データ科学的手法による効率的なマッピングの検討(1)
菊地亮太, 沓掛健太朗, 出浦桃子, 下山幸治, 米永一郎
第64回応用物理学会春季学術講演会   14 Mar 2017   
データ科学的手法による効率的なマッピングの検討(2)
沓掛健太朗, 菊地亮太, 出浦桃子, 下山幸治, 米永一郎
第64回応用物理学会春季学術講演会   14 Mar 2017   
表面活性化接合Si/GaAs界面の平面TEM観察
独立行政法人日本学術振興会接合界面創成技術第191委員会 第7回研究会   16 Dec 2016   
Grain boundary segregation in mono-like Si
K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda
金属材料研究所第132回講演会   24 Nov 2016   
顕微発光イメージングによるシリコン結晶中の粒界評価
沓掛健太朗, 出浦桃子, 米永一郎
金属材料研究所第132回講演会   24 Nov 2016   
ナノインデンテーションにより評価した窒化ホウ素(BN)の機械的特性
出浦桃子, 沓掛健太朗, 米永一郎, 谷口尚
金属材料研究所第132回講演会   24 Nov 2016   
Segregation ability of oxygen and carbon atoms at large-angle grain boundaries in Si
K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Joint Workshop   10 Oct 2016   
Grain boundary segregation of nickel, copper, and oxygen atoms in a mono-like Si crystal
K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda
9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Joint Workshop   10 Oct 2016   
TEM-3次元アトムプローブ複合法で評価したSi中の大角粒界の不純物
井上海平, 沓掛健太朗, 出浦桃子, 米永一郎, 清水康雄, 井上耕治, 海老澤直樹, 永井康介, 吉田秀人, 竹田精治, 田中真悟, 香山正憲
東北大学金属材料研究所附属量子エネルギー材料科学国際研究センター 平成28年度大洗研究会   29 Sep 2016   
Nanoscopic segregation ability of large-angle tilt boundaries in Si
K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Extended Defects in Semiconductors 2016   25 Sep 2016   
Segregation mechanism at small angle tilt boundaries in Si
K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani
Extended Defects in Semiconductors 2016   25 Sep 2016   
モノライクシリコンにおける不純物の粒界偏析
沓掛健太朗, 出浦桃子, 米永一郎, 清水康雄, 井上耕治, 海老澤直樹, 永井康介,吉田秀人,竹田精治
第77回応用物理学会秋季学術講演会   13 Sep 2016   
シリコン中の大角粒界における不純物の偏析能
井上海平, 藤原航三, 沓掛健太朗, 出浦桃子, 米永一郎, 清水康雄, 井上耕治, 海老澤直樹, 永井康介,吉田秀人,竹田精治, 田中真悟, 香山正憲
第77回応用物理学会秋季学術講演会   13 Sep 2016   
常温で表面活性化接合したSi/GaAs界面の平面TEM観察
梁剣波, 重川直輝
第77回応用物理学会秋季学術講演会   13 Sep 2016   
ウルツ鉱BNと立方晶BNの機械的特性の比較
出浦桃子,沓掛健太朗,米永一郎,谷口尚
第77回応用物理学会秋季学術講演会   13 Sep 2016   
Grain boundaries in silicon crystals: Crystallographic interaction and dislocation generation during crystal growth
K. Kutsukake, M. Deura, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
Evaluation of mechanical properties for w-BN using nanoindentation
M. Deura, K. Kutsukake, I. Yonenaga, T. Taniguchi
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
Influence of grain boundaries on stress concentration in multicrystalline Si
S. Sugioka, K. Kutsukake, M. Deura, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
Lattice parameter of heavily impurity doped Si
I. Yonenaga, R. Gotoh, K. Omote, K. Inoue, K. Kutsukake, M. Deura
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
Enhanced diffusivity of Mn in heavily dislocated region of Si crystal
I. Yonenaga, R. Gotoh
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
Abnormal diffusivity of oxygen in thermal-double-donor formation in Si
T. Yoshioka, M. Deura, K. Kutsukake, I. Yonenaga
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)   7 Aug 2016   
First principles calculations of solution energies of dopants around stacking faults in Ge crystal
K. Sakakibara, T. Fujioka, S. R. Nishitani, I. Yonenaga
9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9)   1 Aug 2016   
Elastic properties of wurtzite-type BN evaluated by nanoindentation
M. Deura, K. Kutsukake, H. Fukuyama, I. Yonenaga, T. Taniguchi
第35回電子材料シンポジウム   6 Jul 2016   
TEM-3次元アトムプローブ複合法によるSi中の傾角粒界の不純物偏析能の評価
井上海平, 出浦桃子, 沓掛健太朗, 米永一郎, 海老澤直樹, 清水康雄, 井上耕治, 永井康介,吉田秀人,竹田精治,田中真悟,香山正憲
日本顕微鏡学会第72回学術講演会   14 Jun 2016   
Segregation abilities of large-angle tilt boundaries in silicon
K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Summit of Materials Science 2016 (SMS2016)   18 May 2016   
Luminescence imaging through a spatially-resolved camera for defect characterization in silicon crystals
K. Kutsukake, M. Deura, I. Yonenaga
Summit of Materials Science 2016 (SMS2016)   18 May 2016   
Evaluation of elastic properties of III-nitrides using nanoindentation
M. Deura, K. Kutsukake, I. Yonenaga
Summit of Materials Science 2016 (SMS2016)   18 May 2016   
ナノインデンテーションを用いたInNの弾性特性の解明
出浦桃子,沓掛健太朗,米永一郎,王新強
第8回 窒化物半導体結晶成長講演会   9 May 2016   
Three-dimensional evaluation of segregation ability at grain boundaries in Si by atom probe tomography combined with transmission electron microscopy
Eorupean Materials Research Society 2016 Spring Meeting   2 May 2016   
Nanoscopic mechanism of impurity segregation at grain boundaries in silicon
K. Inoue, S. Ninomiya, K. Kutsukake, K. Fujiwara, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
Materials Research Society 2016 Spring Meeting   28 Mar 2016   
Self-organization of metal silicide epilayers at grain boundaries in silicon
K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. Nishitani, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai
Materials Research Society 2016 Spring Meeting   28 Mar 2016   
シリコン中の小傾角粒界における銅の偏析機構
井上海平, 沓掛健太朗, 出浦桃子, 米永一郎, 海老澤直樹, 清水康雄, 井上耕治, 永井康介,吉田秀人,竹田精治,谷口僚,大坪秀礎,西谷滋人
日本物理学会第71回年次大会   19 Mar 2016   
タンタル酸リチウム結晶中の転位の観察
梶ヶ谷富男、杉山正史、石川治男、米永一郎
第63回応用物理学会春季学術講演会   19 Mar 2016   
ナノインデンテーションを用いたウルツ鉱構造窒化ホウ素(w-BN)の機械的特性評価
出浦桃子, 沓掛健太朗, 米永一郎
第63回応用物理学会春季学術講演会   19 Mar 2016   
太陽電池用多結晶Siの粒界での応力集中
杉岡翔太, 沓掛健太朗, 出浦桃子, 米永一郎
第63回応用物理学会春季学術講演会   19 Mar 2016   
坩堝内成長で得られる太陽電池用Si結晶の粒界での応力集中
杉岡翔太, 沓掛健太朗, 出浦桃子, 米永一郎
第7回薄膜太陽電池セミナー   13 Mar 2016   
Impurity segregation at small angle tilt boundaries in silicon: nanoscopic mechanisms and applications
Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2016   18 Jan 2016   
Characterization of electrical properties of defects in multicrystalline silicon through photoluminescence imaging
K. Kutsukake, M. Deura, I. Yonenaga
11th China SoG Silicon and PV Power Conference (CSPV11)   26 Nov 2015   
ゲルマニウム結晶中の酸素クラスター形成に対するスズ不純物濃度依存性
井上海平, 村尾優, 太子敏則, 沓掛健太朗, 出浦桃子, 米永一郎
金属材料研究所第130回講演会   25 Nov 2015   
太陽電池用モノライクSiインゴット中の有限要素法を用いた応力解析
杉岡翔太, 沓掛健太朗, 出浦桃子, 米永一郎
金属材料研究所第130回講演会   25 Nov 2015   
Si単結晶中の塑性変形で発生した転位に起因する深い準位の測定
大崎洋範、出浦桃子、沓掛健太朗、米永一郎
金属材料研究所第130回講演会   25 Nov 2015   
Metal silicide epilayers self-organized at grain boundaries in silicon
K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
2nd East-Asia Microscopy Conference (EAMC2)   24 Nov 2015   

Social Contribution

 
金属材料研究所第84回夏期講習会
[Others]  28 Jul 2014 - 29 Jul 2014
講義:粒界特性を制御したシリコン太陽電池結晶の開発
自然科学の基礎を訪ねる「科学の最先端を市民に語る」第21回湯川記念講演会
[Others]  19 Nov 2005
物理学実験のデモンストレーション
青少年のための科学の祭典
[Others]  24 Dec 1995
物理実験のデモンストレーション
欧米で集光型太陽電池開発シフトへ
[Informant]  金属時評  25 Oct 2009
東北大高品質ゲルマニウム単結晶の育成に成功
[Informant]  新素材産業情報  20 Sep 2009

Others

 
Oct 2017   多結晶材料情報学による一般粒界物性理論の確立とスマートシリコンインゴットの創製
多結晶材料は、組織の複雑さと粒界の多様性により、普遍的な高性能化指針が不明確でした。本研究では、大量の実用多結晶ウェーハに対するデータ収集・機械学習・理論計算の連携により、一般粒界の構造・物性の理論構築を行う多結晶材料情報学を開拓します。その有用性を、データ科学によって設計され理論に裏付けされた多結晶組織を有し、優れた特性を示す太陽電池用スマートシリコンインゴットの創製により実証します。
Apr 2017   LT結晶育成における転位形成と多結晶化発生メカニズム解明
LT結晶育成における転位形成と多結晶化発生メカニズム解明
Apr 2012   軽量高効率近赤外光電素子のためのGe双晶超格子の形成にむけて
軽量高効率近赤外光電素子のためのGe双晶超格子の形成にむけて
Feb 2012   太陽電池用半導体中の粒界機能
半導体中の転位、粒界、ドーパント・不純物原子(点欠陥)を研究対象とし、同一欠陥に対して原子配列を透過電子顕微鏡法、電気特性(電気伝導度と少数キャリア寿命)を透過電子顕微鏡内での電気・光学測定法、また組成分布をアトムプローブ法で調べ、個々の欠陥が電気伝導特性に及ぼす影響を評価します。
Sep 2011   第21回格子欠陥フォーラム「格子欠陥が担うエネルギー・環境材料に関する挑戦課題」
「格子欠陥が担うエネルギー・環境材料に関する挑戦課題」に関するシンポジウム