CHICHIBU Shigefusa

J-GLOBAL         Last updated: Oct 10, 2019 at 14:04
 
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Name
CHICHIBU Shigefusa
URL
http://www.tagen.tohoku.ac.jp/labo/chichibu/index-j.html
Affiliation
Tohoku University
Section
Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Quantum Optoelectronics
Job title
Professor

Research Areas

 
 

Committee Memberships

 
Apr 2008
 - 
Mar 2009
応用物理学会  論文賞審査委員
 

Awards & Honors

 
Jul 2019
Evaluation of Subsequent Implantation Effect into Mg Implanted Region in GaN, Best poster Award, The 13th International Conference on Nitride Semiconductors (ICNS-13)
Winner: S. Takashima, R. Tanaka, K. Ueno, H. Matsuyama, Y. Fukushima, M. Edo, K. Shima, K. Kojima, S. F. Chichibu, and A. Uedono
 
Jun 2019
"Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes", Best Paper Award, 19th International Workshop on Junction Technology (IWJT2019),
Winner: K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu
 
Apr 2010
インジウムを含む窒化物半導体混晶の光物性の研究, 平成22年度科学技術分野の文部科学大臣表彰科学技術賞(研究部門), 文部科学省
 
Apr 2009
Inを含む窒化物半導体混晶の光物性研究, 第41回(平成21年)市村学術賞 功績賞, 財団法人新技術開発財団
 
Oct 2008
第7回 (2008年) ドコモ・モバイル・サイエンス賞 基礎科学部門優秀賞 「非視認通信および表示・照明用III族窒化物半導体の物性研究」, NPO法人 モバイル・コミュニケーション・ファンド
 

Published Papers

 
In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film
S. F. Chichibu, K. Kojima, K. Hazu, Y. Ishikawa, K. Furusawa, S. Mita, R. Collazo, Z. Sitar, and A. Uedono
Applied Physics Letters   115(15) 151903-1-5   Sep 2019   [Refereed]
Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy
K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, and S. F. Chichibu
APL Materials   7 071116-1-071116-6   Jul 2019   [Refereed]
Theoretical Formulation of Experimentally Observed Quantum Efficiency of Radiation in Semiconducting Crystal
H. Asai, K. Kojima, S.F.Chichibu, K.Fukuda
PHYSICAL REVIEW APPLIED   12 014002-1-014002-12   Jun 2019   [Refereed]
Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet light-emitting diodes grown on an AlN template having macrosteps
Y. Nagasawa, K. Kojima, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
Applied Physics Express   12(6) 064009-1-064009-6   Jun 2019   [Refereed]
Annealing behavior of vacancy-type defects in Mg- and H-implanted GaN studied using monoenergetic positron beam
Akira Uedono, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Werner Egger, Tonjes Koschine, Christoph Hugenschmidt, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Physica Status Solidi B   256 1900104-1-1900104-12   May 2019   [Refereed]
Impacts of growth temperature on the structural properties of BGaN films grown by metalorganic vapor phase epitaxy using trimethylboron
K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T. Nakano
Japanese Journal of Applied Physics   58(SC) SC1042-1-SC1042-5   May 2019   [Refereed]
Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
Kazunobu Kojima, Kenichiro ikemura, Shigefusa, F. Chichibu
Appl. Phys. Express   12 062010-1-062010-4   May 2019   [Refereed]
Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures
S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
Japanese Journal of Applied Physics   58(SC) SC0802-1-SC0802-10   May 2019   [Refereed]
Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, S. F. Chichibu
Applied Physics Letters   114(1) 011102   Jan 2019   [Refereed]
Room-temperature photoluminescence lifetime for the near-band-edge emission of (0001) p-type GaN fabricated by sequential ion-implantation of Mg and H
K.Shima, H.Iguchi, T.Narita, K.Kataoka, K.Kojima, A.Uedono, S.F.Chichibu
Applied Physics Letters   113(19) 191901-1-191901-5   Nov 2018   [Refereed]

Books etc

 
III-Nitride Ultlaviolet Emitters - Technology and Applications
Shigefusa F. Chichibu, Hideto Miyake, Kazumasa Hiramtsu, Akira Uedono (Part:Joint Work, Chapter 5, Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials, pp.115-136)
Springer   Nov 2015   
847
Technology of Gallium Nitride Crystal Growth
edited by D. Ehrentraut, E. Meissner, M. Bockowski (Part:Joint Work, Chapter 13, Optical properties of GaN substrates, Vol.133 , pp.277-293)
Springer Series in Materials Sciences   Jul 2010   
日本結晶成長学会誌
秩父重英,上殿明良 (Part:Joint Work, =特集= 窒化物半導体結晶中の欠陥 III族窒化物半導体(Al,Ga)Nにおける発光特性と点欠陥の相関関係, vol.36(3), pp.20-31)
日本結晶成長学会   Oct 2009   
Advances in Light Emitting Materials
S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck,,S. Nakamura (Part:Joint Work, Impact of Point Defects on the Luminescence Properties of (Al,Ga)N, vol.590, pp.233-248)
Materials Science Forum   2008   
科学立国日本を築く-極限に挑む気鋭の研究者たち-
榊裕之監修 (Part:Supervisor, 分担執筆(第1章4節 III族窒化物半導体の発光メカニズム p.22-31 全10頁))
日刊工業新聞社   Mar 2006   

Conference Activities & Talks

 
Role of Al-vacancy complexes in AlN and high AlN mole fraction AlGaN alloys [Invited]
S. F. Chichibu, H. Miyake, and A. Uedono
4th International Workshop on UV Materials and Devices (IWUMD-IV)   12 Sep 2019   
"Fabrication of planar ZnO microcavities for near ultraviolet polariton laser operating at room temperature
K. Shima, K. Furusawa, K. Kojima, and S. F. Chichibu
4th International Workshop on UV Materials and Devices (IWUMD-IV)   11 Sep 2019   
Theoretical Analysis of Photo-Recycling Effect on External Quantum Efficiency Considering Spatial Carrier Dynamics
H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda
2019 International Conference on Solid State Devices and Materials   2 Sep 2019   
Impact of vacancy complexes on the nonradiative recombination processes in III-N devices [Invited]
S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
The 13th International Conference on Nitride Semiconductors (ICNS-13)   12 Jul 2019   
Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors
S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara
The 13th International Conference on Nitride Semiconductors (ICNS-13)   10 Jul 2019   
Dependences of external quantum efficiency of radiation and photoluminescence lifetime on the carbon concentration in GaN on GaN structures
K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, and S. F. Chichibu
The 13th International Conference on Nitride Semiconductors (ICNS-13)   10 Jul 2019   
Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes
K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
he 13th International Conference on Nitride Semiconductors (ICNS-13)   10 Jul 2019   
Effects of an extra Al metal added during the acidic ammonothermal growth of GaN crystals
D. Tomida, Q. Bao, M. Saito, K. Kurimoto, M. Ito, T. Ishiguro, and S. F.Chichibu
The 13th International Conference on Nitride Semiconductors (ICNS-13)   8 Jul 2019   
Microscopic nonuniformities in AlGaN-based 260 and 285 nm light-emitting multiple quantum wells grown on AlN templates with dense macrosteps analyzed by cathodoluminescence spectroscopy
Y. Nagasawa, R. Sugie, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
The 13th International Conference on Nitride Semiconductors (ICNS-13)   8 Jul 2019   
Analytical formula for quantum efficiency of radiation considering self- absorption process
H. Asai, K. Kojima, S. F. Chichibu, and K. Fukuda
The 13th International Conference on Nitride Semiconductors (ICNS-13)   7 Jul 2019