CHICHIBU Shigefusa

J-GLOBAL         Last updated: Apr 22, 2019 at 14:54
 
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Name
CHICHIBU Shigefusa
URL
http://www.tagen.tohoku.ac.jp/labo/chichibu/index-j.html
Affiliation
Tohoku University
Section
Institute of Multidisciplinary Research for Advanced Materials Division of Measurements Quantum Optoelectronics
Job title
Professor

Research Areas

 
 

Committee Memberships

 
Apr 2008
 - 
Mar 2009
応用物理学会  論文賞審査委員
 

Awards & Honors

 
Apr 2010
インジウムを含む窒化物半導体混晶の光物性の研究, 平成22年度科学技術分野の文部科学大臣表彰科学技術賞(研究部門), 文部科学省
 
Apr 2009
Inを含む窒化物半導体混晶の光物性研究, 第41回(平成21年)市村学術賞 功績賞, 財団法人新技術開発財団
 
Oct 2008
第7回 (2008年) ドコモ・モバイル・サイエンス賞 基礎科学部門優秀賞 「非視認通信および表示・照明用III族窒化物半導体の物性研究」, NPO法人 モバイル・コミュニケーション・ファンド
 
Sep 2008
論文名 Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes, 2008年度 応用物理学会論文賞「JJAP論文賞」, 応用物理学会
Winner: Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa F. Chichibu, Jun Ichihara, and Hidemi Takasu
 

Published Papers

 
Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, S. F. Chichibu
Applied Physics Letters   114(1) 011102   Jan 2019   [Refereed]
Room-temperature photoluminescence lifetime for the near-band-edge emission of (0001) p-type GaN fabricated by sequential ion-implantation of Mg and H
K.Shima, H.Iguchi, T.Narita, K.Kataoka, K.Kojima, A.Uedono, S.F.Chichibu
Applied Physics Letters   113(19) 191901-1-191901-5   Nov 2018   [Refereed]
Tomida Daisuke, Bao Quanxi, Saito Makoto, Kurimoto Kohei, Sato Fukuma, Ishiguro Tohru, Chichibu Shigefusa F.
APPLIED PHYSICS EXPRESS   11(9)    Sep 2018   [Refereed]
Imagawa Haruo, Wu Xiaoyong, Itahara Hiroshi, Yin Shu, Kojima Kazunobu, Chichibu Shigefusa F., Sato Tsugio
DALTON TRANSACTIONS   47(20) 7070-7076   May 2018   [Refereed]
Chichibu S. F., Shima K., Kojima K., Takashima S., Edo M., Ueno K., Ishibashi S., Uedono A.
APPLIED PHYSICS LETTERS   112(21)    May 2018   [Refereed]
Chichibu S. F., Uedono A., Kojima K., Ikeda H., Fujito K., Takashima S., Edo M., Ueno K., Ishibashi S.
JOURNAL OF APPLIED PHYSICS   123(16)    Apr 2018   [Refereed]
Uedono Akira, Takashima Shinya, Edo Masaharu, Ueno Katsunori, Matsuyama Hideaki, Egger Werner, Koschine Toenjes, Hugenschmidt Christoph, Dickmann Marcel, Kojima Kazunobu, Chichibu Shigefusa F., Ishibashi Shoji
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   255(4)    Apr 2018   [Refereed]
Chichibu Shigefusa F., Ishikawa Youichi, Kominami Hiroko, Hara Kazuhiko
JOURNAL OF APPLIED PHYSICS   123(6)    Feb 2018   [Refereed]
K. Koike, M. Yano, S.Gonda, A. Uedono, S. Ishibashi, K.Kojima, S. F. Chichibu
Journal of Applied Physics   123(16) 161562-1-7   Jan 2018   [Refereed]
9338
M. Oishi, S. Shiomi, T. Yamamoto, T. Ueki, Y. Kai, S. Chichibu, A. Takatori, K. Kojima
Journal of Applied Physics   122(11) 113104-1-8   Sep 2017   [Refereed]
9158

Books etc

 
III-Nitride Ultlaviolet Emitters - Technology and Applications
Shigefusa F. Chichibu, Hideto Miyake, Kazumasa Hiramtsu, Akira Uedono (Part:Joint Work, Chapter 5, Impacts of Dislocations and Point Defects on the Internal Quantum Efficiency of the Near-Band-Edge Emission in AlGaN-Based DUV Light-Emitting Materials, pp.115-136)
Springer   Nov 2015   
847
Technology of Gallium Nitride Crystal Growth
edited by D. Ehrentraut, E. Meissner, M. Bockowski (Part:Joint Work, Chapter 13, Optical properties of GaN substrates, Vol.133 , pp.277-293)
Springer Series in Materials Sciences   Jul 2010   
日本結晶成長学会誌
秩父重英,上殿明良 (Part:Joint Work, =特集= 窒化物半導体結晶中の欠陥 III族窒化物半導体(Al,Ga)Nにおける発光特性と点欠陥の相関関係, vol.36(3), pp.20-31)
日本結晶成長学会   Oct 2009   
Advances in Light Emitting Materials
S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck,,S. Nakamura (Part:Joint Work, Impact of Point Defects on the Luminescence Properties of (Al,Ga)N, vol.590, pp.233-248)
Materials Science Forum   2008   
科学立国日本を築く-極限に挑む気鋭の研究者たち-
榊裕之監修 (Part:Supervisor, 分担執筆(第1章4節 III族窒化物半導体の発光メカニズム p.22-31 全10頁))
日刊工業新聞社   Mar 2006   

Conference Activities & Talks

 
Recent progress in acidic ammonothermal growth of GaN crystals [Invited]
S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K.Kojima, and T. Ishiguro
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPLasma2019)   17 Mar 2019   
Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications [Invited]
S. F. Chichibu
The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO, Oxide-based Materials and Devices X, Session 5 Ultra Wide Bandgap Oxide Semiconductors: Progress in Thin Film Growth I   2 Feb 2019   
Different Nonradiative Recombination on Terraces and Macrosteps of Uneven QW for 285 nm LED Grown on AlN Template with Dense Macrosteps
Yosuke Nagasawa, Kazunobu Kojima, Ryuichi Sugie, Akira Hirano, Masamichi Ippommatsu, Hiroshi Amano, Isamu Akasaki, and Shigefusa F. Chichibu
IWUMD 2018   11 Dec 2018   
Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grown on macrosteps
Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I.Akasaki, S.F.Chichibu
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate
S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Kinetics analysis of desorption process in BGaN MOVPE
K. Ebara, K. Mochizuki, Y. Inoue, T. Aoki, K. Kojima, S. F. Chichibu, and T.Nakano
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Fabrication and evaluation of thick BGaN neutron detection diodes
T. Maruyama, Y. Takahashi, N. Yamada, K. Ebara, H. Nakagawa, S. Usami, Y.Honda, H. Amano, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, and T. Nakano
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Multi-gigabit-class deep ultraviolet wireless communication at 280 nm based on an AlGaN light emitting diode
K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S.F.Chichibu
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures
S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H.Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018   
Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrosteps
K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I.Akasaki, S.F.Chichibu
International Workshop on Nitride Semiconductors 2018 (IWN2018)   11 Nov 2018