2016年8月
Direct modulation of 1.3 mu m quantum dot lasers on silicon at 60 degrees C
OPTICS EXPRESS
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- 巻
- 24
- 号
- 16
- 開始ページ
- 18428
- 終了ページ
- 18435
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OE.24.018428
- 出版者・発行元
- OPTICAL SOC AMER
We demonstrate direct modulation of an InAs/GaAs quantum dot (QD) laser on Si. A Fabry-Perot QD laser was integrated on Si by an ultraviolet-activated direct bonding method, and a cavity was formed using cleaved facets without HR/AR coatings. The bonded laser was operated under continuous-wave pumping at room temperature with a threshold current of 41 mA and a maximum output power of 30 mW (single facet). Even with such a simple device structure and fabrication process, our bonded laser is directly modulated using a 10 Gbps non-return-to-zero signal with an extinction ratio of 1.9 dB at room temperature. Furthermore, 6 Gbps modulation with an extinction ratio of 4.5 dB is achieved at temperatures up to 60 degrees C without any current or voltage adjustment. These results of device performances indicate an encouraging demonstration on III-V QD lasers on Si for the applications of the photonic integrated circuits. (C) 2016 Optical Society of America
- リンク情報
- ID情報
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- DOI : 10.1364/OE.24.018428
- ISSN : 1094-4087
- Web of Science ID : WOS:000384716000082