2010年4月
High-Q design of semiconductor-based ultrasmall photonic crystal nanocavity
OPTICS EXPRESS
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- ,
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- 巻
- 18
- 号
- 8
- 開始ページ
- 8144
- 終了ページ
- 8150
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OE.18.008144
- 出版者・発行元
- OPTICAL SOC AMER
We report a high-Q design for a semiconductor-based two-dimensional zero-cell photonic crystal (PhC) nanocavity with a small mode volume. The optimization of displacements of hexagonal-lattice air holes in the Gamma-M direction, in addition to the Gamma-K direction, resulted in a cavity quality factor Q of 2.8 x 10(5) sustaining the small modal volume of 0.23(lambda(0)/n)(3). The momentum space consideration of out-of-plane radiation loss showed that the optimization of air hole displacements in both the in-plane x and y directions reduced FT components in the leaky region along the k(x) and k(y) axes, respectively. This high-Q cavity design is applicable to Si and GaAs semiconductor materials. (c) 2010 Optical Society of America
- リンク情報
- ID情報
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- DOI : 10.1364/OE.18.008144
- ISSN : 1094-4087
- Web of Science ID : WOS:000276610300064