2007年11月
Electrical analyses of germanium MIS structure and spectroscopic measurement of the interface trap density in an insulator/germanium interface at room temperature
IEEE TRANSACTIONS ON ELECTRON DEVICES
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- ,
- ,
- 巻
- 54
- 号
- 11
- 開始ページ
- 2878
- 終了ページ
- 2883
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/TED.2007.907111
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
In this paper, we present an equivalent circuit model of a germanium (Ge) MIS structure that is biased in the inversion region, which includes the effects of the high intrinsic carrier density and high diffusion-limited conductance of the Ge substrate at room temperature. The model can successfully express the gate bias and frequency dependences of the capacitance characteristics that are specific to the Ge MIS capacitor. Moreover, it will be shown that the interface trap density and its gate bias dependence in the inversion region can be spectroscopically determined from the gate bias and measurement frequency dependences of the equivalent parallel conductance of the Ge surface.
- リンク情報
- ID情報
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- DOI : 10.1109/TED.2007.907111
- ISSN : 0018-9383
- Web of Science ID : WOS:000250590200010