2016年10月
Fabry-Perot interference in a triple-gated quantum point contact
APPLIED PHYSICS LETTERS
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- 巻
- 109
- 号
- 14
- 開始ページ
- 143509-1
- 終了ページ
- 143509-4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4964404
- 出版者・発行元
- AMER INST PHYSICS
We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Perot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed. Published by AIP Publishing.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4964404
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000386152800067