MISC

2007年3月

Shot noise of a multiwalled carbon nanotube field effect transistor

PHYSICAL REVIEW B
  • Fan Wu
  • ,
  • Taku Tsuneta
  • ,
  • Reeta Tarkiainen
  • ,
  • David Gunnarsson
  • ,
  • Tai-Hong Wang
  • ,
  • Pertti J. Hakonen

75
12
開始ページ
125419
終了ページ
記述言語
英語
掲載種別
DOI
10.1103/PhysRevB.75.125419
出版者・発行元
AMER PHYSICAL SOC

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube field effect transistor at 4.2 K over the frequency range of 600-950 MHz. We find a transconductance of 3-3.5 mu S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 mu V/root Hz for V > 0 and V < 0, respectively. As effective charge noise, this corresponds to (2-3)x10(-5) e/root Hz.

Web of Science ® 被引用回数 : 11

リンク情報
DOI
https://doi.org/10.1103/PhysRevB.75.125419
CiNii Articles
http://ci.nii.ac.jp/naid/80018466287
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000245330200096&DestApp=WOS_CPL

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