Oct, 2004
Ultrafast optical study of amorphous Ge thin films for superconductor/ semiconductor hybrid devices
Physica C: Superconductivity and its Applications
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- Volume
- 412-414
- Number
- SPEC. ISS.
- First page
- 1602
- Last page
- 1606
- Language
- English
- Publishing type
- DOI
- 10.1016/j.physc.2003.12.089
- Publisher
- ELSEVIER SCIENCE BV
We investigated the optical response of amorphous (a-) Ge thin films by a time-resolved reflectivity measurement and the observation of terahertz radiation from a-Ge photoconductive switch coupled with Au/Cr transmission lines. The results show that the lifetime of photocarrier in the a-Ge is about 0.9 ps, and the pulse width of terahertz beam radiated from the photoconductive switch is about 1 ps. These results indicate that a-Ge can be used as an optical-to-electrical converter in sub-terahertz frequency range. However, the peak width of a-Ge photoconductive switches with YBCO transmission lines is about 2 ps and broad compared with the result with Au/Cr transmission lines. © 2004 Published by Elsevier B.V.
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- https://doi.org/10.1016/j.physc.2003.12.089
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- ID information
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- DOI : 10.1016/j.physc.2003.12.089
- ISSN : 0921-4534
- SCOPUS ID : 4644289468
- Web of Science ID : WOS:000224711500155