鈴木亮一郎 (Ryoichiro Suzuki) - マイポータル

基本情報

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

APPLIED PHYSICS LETTERS 92(14) 141110 2008年4月
Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

R. Suzuki, T. Miyamoto, F. Koyama

Journal of Crystal Growth 298 574 2007年
Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(20-23) L585-L587 2006年6月
InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R Suzuki, T Miyamoto, T Matsuura, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 3(3) 528-+ 2006年