2019年11月
Characteristics of failure SiC schottky barrier diode and si schottky barrier diode using induced lightning serge application test
8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
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- 開始ページ
- 631
- 終了ページ
- 634
- 記述言語
- 掲載種別
- 研究発表ペーパー・要旨(国際会議)
- DOI
- 10.1109/ICRERA47325.2019.8997019
© 2019 IEEE. Recently, failures in photovoltaic systems (PVSs) caused by lightning damage have been increasing. When lightning strikes a PVS, the bypass diode (BPD), which is a protection element in the solar cell module (PV-MDL), breaks down and burns out, rendering the PVS inoperable. In this study, an impulse current test was conducted to clarify the lightning-induced BPD failure mechanism. The impulse current with a peak of 100 kA was employed to simulate a lightning strike traveling in the vicinity of a PV-MDL. The results indicated that a BPD fails because lightning (induced electromotive force) strikes in the bypass circuit of the PV-MDL as the impulse current passes in its vicinity. Furthermore, installing a metal frame in the PV-MDL was shown to reduce the negative impact of such lightning strikes.
- リンク情報
- ID情報
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- DOI : 10.1109/ICRERA47325.2019.8997019
- ISBN : 9781728135878
- SCOPUS ID : 85080879322