MISC

査読有り
2019年11月

Characteristics of failure SiC schottky barrier diode and si schottky barrier diode using induced lightning serge application test

8th International Conference on Renewable Energy Research and Applications, ICRERA 2019
  • Toshiyuki Hamada
  • ,
  • Kenta Nakamoto
  • ,
  • Takumi Kashiwaya
  • ,
  • Ikuo Nanno
  • ,
  • Norio Ishikura
  • ,
  • Shinichiro Oke
  • ,
  • Masayuki Fujii

開始ページ
631
終了ページ
634
記述言語
掲載種別
研究発表ペーパー・要旨(国際会議)
DOI
10.1109/ICRERA47325.2019.8997019

© 2019 IEEE. Recently, failures in photovoltaic systems (PVSs) caused by lightning damage have been increasing. When lightning strikes a PVS, the bypass diode (BPD), which is a protection element in the solar cell module (PV-MDL), breaks down and burns out, rendering the PVS inoperable. In this study, an impulse current test was conducted to clarify the lightning-induced BPD failure mechanism. The impulse current with a peak of 100 kA was employed to simulate a lightning strike traveling in the vicinity of a PV-MDL. The results indicated that a BPD fails because lightning (induced electromotive force) strikes in the bypass circuit of the PV-MDL as the impulse current passes in its vicinity. Furthermore, installing a metal frame in the PV-MDL was shown to reduce the negative impact of such lightning strikes.

リンク情報
DOI
https://doi.org/10.1109/ICRERA47325.2019.8997019
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85080879322&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85080879322&origin=inward
ID情報
  • DOI : 10.1109/ICRERA47325.2019.8997019
  • ISBN : 9781728135878
  • SCOPUS ID : 85080879322

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