Masataka HIGASHIWAKI

J-GLOBAL         Last updated: Jun 5, 2019 at 17:02
 
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Name
Masataka HIGASHIWAKI
URL
http://www2.nict.go.jp/green/
Affiliation
National Institute of Information and Communications Technology
Job title
Director
Degree
Ph. D (Engineering)(Osaka University)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2016
 - 
Today
Director, Advanced ICT Research Institute, Green ICT Device Advanced Development Center, National Institute of Information and Communications Technology
 
Dec 2013
 - 
Mar 2016
Director, Advanced ICT Research Institute, Green ICT Device Advanced Development Center, National Institute of Information and Communications Technology
 
Oct 2012
 - 
Nov 2013
Chief Senior Researcher, NICT
 
Apr 2010
 - 
Mar 2013
Researcher, JST PRESTO
 
Sep 2007
 - 
Mar 2010
Project Scientist, Department of Electrical and Computer Engineering, University of California, Santa Barbara
 
Oct 2004
 - 
Aug 2007
Senior Researcher, NICT
 
2007
   
 
~ Project Scientist, Department of Electrical and Computer Engineering, University of California, Santa Barbara
 
Apr 2000
 - 
Sep 2004
Researcher, CRL (currently, NICT)
 
2000
 - 
2004
Researcher, Communications Research Laboratory (CRL)
 
2004
   
 
~ Senior Researcher, National Institute of Information adn Communications Technology (NICT)
 
Apr 1998
 - 
Mar 2000
Postdoctral Fellow, JSPS
 
1998
 - 
2000
JSPS Postdoctral Fellow
 

Education

 
 
 - 
1998
Material Physics, Graduate School, Division of Engineering Science, Osaka University
 
 
 - 
1994
Material Physics, Faculty of Engineering Science, Osaka University
 

Awards & Honors

 
Feb 2018
Nakamura Lecturer Award, University of California, Santa Barbara
 
Feb 2015
The JSPS Award, Japan Society of the Promotion of Science
 
2009
The Research Encouragement Award of Marubun Research Promotion Foundation
 
2007
The Young Scientist Award of the International Symposium on Compound Semiconductors (ISCS)
 
2006
The Japan Society of Applied Physics Outstanding Achievement Award for the Best Original Paper
 
2005
The Japan Society of Applied Physics Outstanding Achievement Award for the Most Promising Young Scientist
 
2004
The Japan Society of Applied Physics, Annual Meeting Young Scientist Award for the Presentation of an Excellent Paper
 

Published Papers

 
Pomeroy J. W, Middleton C, Singh M, Dalcanale S, Uren M. J, Wong M. H, Sasaki K, Kuramata A, Yamakoshi S, Higashiwaki M, Kuball M.
IEEE Electron Device Letters   40(2) 189-192   Feb 2019   [Refereed]
Lin Chia-Hung, Hatta Naoki, Konishi Keita, Watanabe Shinya, Kuramata Akito, Yagi Kuniaki, Higashiwaki Masataka
Applied Physics Letters   114(3)    2019   [Refereed]
Goto Ken, Konishi Keita, Murakami Hisashi, Kumagai Yoshinao, Monemar Bo, Higashiwaki Masataka, Kuramata Akito, Yamakoshi Shigenobu
Thin Solid Films   666 182-184   Nov 2018   [Refereed]
Singh Manikant, Casbon Michael A., Uren Michael J., Pomeroy James W., Dalcanale Stefano, Karboyan Serge, Tasker Paul J., Wong Man Hoi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka, Kuball Martin
IEEE ELECTRON DEVICE LETTERS   39(10) 1572-1575   Oct 2018   [Refereed]
Wong Man Hoi, Lin Chia-Hung, Kuramata Akito, Yamakoshi Shigenobu, Murakami Hisashi, Kumagai Yoshinao, Higashiwaki Masataka
APPLIED PHYSICS LETTERS   113(10)    Sep 2018   [Refereed]
Konishi Keita, Goto Ken, Togashi Rie, Murakami Hisashi, Higashiwaki Masataka, Kuramata Akito, Yamakoshi Shigenobu, Monemar Bo, Kumagai Yoshinao
JOURNAL OF CRYSTAL GROWTH   492 39-44   Jun 2018   [Refereed]
Gao Hantian, Muralidharan Shreyas, Pronin Nicholas, Karim Md Rezaul, White Susan M., Asel Thaddeus, Foster Geoffrey, Krishnamoorthy Sriram, Rajan Siddharth, Cao Lei R., Higashiwaki Masataka, Von Wenckstern Holger, Grundmann Marius, Zhao Hongping, Look David C., Brillson Leonard J.
APPLIED PHYSICS LETTERS   112(24)    Jun 2018   [Refereed]
Wong Man Hoi, Goto Ken, Morikawa Yoji, Kuramata Akito, Yamakoshi Shigenobu, Murakami Hisashi, Kumagai Yoshinao, Higashiwaki Masataka
APPLIED PHYSICS EXPRESS   11(6)    Jun 2018   [Refereed]
Ono Mizuki, Sasaki Kohei, Nagai Hiroki, Yamaguchi Tomohiro, Higashiwaki Masataka, Kuramata Akito, Yamakoshi Shigenobu, Sato Mitsunobu, Honda Tohru, Onuma Takeyoshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   255(4)    Apr 2018   [Refereed]
Higashiwaki Masataka, Jessen Gregg H.
APPLIED PHYSICS LETTERS   112(6)    Feb 2018   [Refereed]
Wong Man Hoi, Takeyama Akinori, Makino Takahiro, Ohshima Takeshi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
APPLIED PHYSICS LETTERS   112(2)    Jan 2018   [Refereed]
Knight Sean, Mock Alyssa, Korlacki Rafal, Darakchieva Vanya, Monemar Bo, Kumagai Yoshinao, Goto Ken, Higashiwaki Masataka, Schubert Mathias
APPLIED PHYSICS LETTERS   112(1)    Jan 2018   [Refereed]
Onuma T, Nakata Y, Sasaki K, Masui T, Yamaguchi T, Honda T, Kuramata A, Yamakoshi S, Higashiwaki M.
Journal of Applied Physics   124(7)    2018   [Refereed]
Higashiwaki Masataka, Wong Man Hoi, Kamimura Takafumi, Nakata Yoshiaki, Lin Chia-Hung, Lingaparthi Ravikiran, Takeyama Akinori, Makino Takahiro, Ohshima Takeshi, Hatta Naoki, Yagi Kuniaki, Goto Ken, Sasaki Kohei, Watanabe Shinya, Kuramata Akito, Yamakoshi Shigenobu, Konishi Keita, Murakami Hisashi, Kumagai Yoshinao, IEEE
2018 76th Device Research Conference (Drc)      2018   [Refereed]
Tsao J. Y, Chowdhury S, Hollis M. A, Jena D, Johnson N. M, Jones K. A, Kaplar R. J, Rajan S, Van de Walle C. G, Bellotti E, Chua C. L, Collazo R, Coltrin M. E, Cooper J. A, Evans K. R, Graham S, Grotjohn T. A, Heller E. R, Higashiwaki M, Islam M. S, Juodawlkis P. W, Khan M. A, Koehler A. D, Leach J. H, Mishra U. K, Nemanich R. J, Pilawa-Podgurski R. C. N, Shealy J. B, Sitar Z, Tadjer M. J, Witulski A. F, Wraback M, Simmons J. A.
Advanced Electronic Materials   4(1)    2018   [Refereed]
Mock Alyssa, Korlacki Rafal, Briley Chad, Darakchieva Vanya, Monemar Bo, Kumagai Yoshinao, Goto Ken, Higashiwaki Masataka, Schubert Mathias
PHYSICAL REVIEW B   96(24)    Dec 2017   [Refereed]
Higashiwaki Masataka, Kuramata Akito, Murakami Hisashi, Kumagai Yoshinao
JOURNAL OF PHYSICS D-APPLIED PHYSICS   50(33)    Aug 2017   [Refereed]
Sasaki Kohei, Wakimoto Daiki, Thieu Quang Tu, Koishikawa Yuki, Kuramata Akito, Higashiwaki Masataka, Yamakoshi Shigenobu
IEEE ELECTRON DEVICE LETTERS   38(6) 783-785   Jun 2017   [Refereed]
Wong Man Hoi, Nakata Yoshiaki, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
APPLIED PHYSICS EXPRESS   10(4)    Apr 2017   [Refereed]
Konishi Keita, Goto Ken, Murakami Hisashi, Kumagai Yoshinao, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
APPLIED PHYSICS LETTERS   110(10)    Mar 2017   [Refereed]
Chow T. Paul, Omura Ichiro, Higashiwaki Masataka, Kawarada Hiroshi, Pala Vipindas
IEEE TRANSACTIONS ON ELECTRON DEVICES   64(3) 856-873   Mar 2017   [Refereed]
Sasaki K, Wakimoto D, Thieu Q. T, Koishikawa Y, Kuramata A, Higashiwaki M, Yamakoshi S, IEEE
2017 75th Annual Device Research Conference (Drc)      2017   [Refereed]
Wong Man Hoi, Goto Ken, Kuramata Akito, Yamakoshi Shigenobu, Murakami Hisashi, Kumagai Yoshinao, Higashiwaki Masataka, IEEE
2017 75th Annual Device Research Conference (Drc)      2017   [Refereed]
Wong Man Hoi, Takeyama Akinori, Makino Takahiro, Ohshima Takeshi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka, IEEE
2017 75th Annual Device Research Conference (Drc)      2017   [Refereed]
Fujita Shizuo, Kasu Makoto, Higashiwaki Masataka, Kumagai Yoshinao, Onuma Takeyoshi, Oshima Takayoshi, Uno Kazuyuki
JAPANESE JOURNAL OF APPLIED PHYSICS   55(12)    Dec 2016   [Refereed]
Higashiwaki Masataka, Murakami Hisashi, Kumagai Yoshinao, Kuramata Akito
JAPANESE JOURNAL OF APPLIED PHYSICS   55(12)    Dec 2016   [Refereed]
Wong Man Hoi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
JAPANESE JOURNAL OF APPLIED PHYSICS   55(12)    Dec 2016   [Refereed]
Onuma Takeyoshi, Saito Shingo, Sasaki Kohei, Masui Tatekazu, Yamaguchi Tomohiro, Honda Tohru, Kuramata Akito, Higashiwaki Masataka
JAPANESE JOURNAL OF APPLIED PHYSICS   55(12)    Dec 2016   [Refereed]
Kamimura Takafumi, Krishnamurthy Daivasigamani, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
JAPANESE JOURNAL OF APPLIED PHYSICS   55(12)    Dec 2016   [Refereed]
Wong Man Hoi, Morikawa Yoji, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
APPLIED PHYSICS LETTERS   109(19)    Nov 2016   [Refereed]
Konishi Keita, Kamimura Takafumi, Wong Man Hoi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   253(4) 623-625   Apr 2016   [Refereed]
Higashiwaki Masataka, Konishi Keita, Sasaki Kohei, Goto Ken, Nomura Kazushiro, Quang Tu Thieu, Togashi Rie, Murakami Hisashi, Kumagai Yoshinao, Monemar Bo, Koukitu Akinori, Kuramata Akito, Yamakoshi Shigenobu
APPLIED PHYSICS LETTERS   108(13)    Mar 2016   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Murakami Hisashi, Kumagai Yoshinao, Koukitu Akinori, Kuramata Akito, Masui Takekazu, Yamakoshi Shigenobu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY   31(3)    Mar 2016   [Refereed]
Wong Man Hoi, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka
IEEE ELECTRON DEVICE LETTERS   37(2) 212-215   Feb 2016   [Refereed]
Schubert M, Korlacki R, Knight S, Hofmann T, Schoeche S, Darakchieva V, Janzen E, Monemar B, Gogova D, Thieu Q. -T, Togashi R, Murakami H, Kumagai Y, Goto K, Kuramata A, Yamakoshi S, Higashiwaki M.
Physical Review B   93(12)    2016   [Refereed]
Son N. T, Goto K, Nomura K, Thieu Q. T, Togashi R, Murakami H, Kumagai Y, Kuramata A, Higashiwaki M, Koukitu A, Yamakoshi S, Monemar B, Janzen E.
Journal of Applied Physics   120(23)    2016   [Refereed]
Konishi Keita, Goto Ken, Quang Tu Thieu, Togashi Rie, Murakami Hisashi, Kumagai Yoshinao, Monemar Bo, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka, IEEE
2016 74th Annual Device Research Conference (Drc)      2016   [Refereed]
Wong Man Hoi, Morikawa Yoji, Sasaki Kohei, Kuramata Akito, Yamakoshi Shigenobu, Higashiwaki Masataka, IEEE
2016 Compound Semiconductor Week (Csw) Includes 28th International Conference on Indium Phosphide & Related Materials (Iprm) & 43rd International Symposium on Compound Semiconductors (Iscs)      2016   [Refereed]
Onuma T, Saito S, Sasaki K, Goto K, Masui T, Yamaguchi T, Honda T, Kuramata A, Higashiwaki M.
Applied Physics Letters   108(10)    2016   [Refereed]
Ricci F, Boschi F, Baraldi A, Filippetti A, Higashiwaki M, Kuramata A, Fiorentini V, Fornari R.
Journal of Physics-Condensed Matter   28(22)    2016   [Refereed]
Onuma Takeyoshi, Saito Shingo, Sasaki Kohei, Masui Tatekazu, Yamaguchi Tomohiro, Honda Tohru, Higashiwaki Masataka
JAPANESE JOURNAL OF APPLIED PHYSICS   54(11)    Nov 2015   [Refereed]
T. Onuma, Y. Sugiura, T. Yamaguchi, T. Honda, and M. Higashiwaki
Appl. Phys. Exp.   8(5) 1-52401   Apr 2015   [Refereed]
Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo
Appl. Phys. Lett.   106(11) 111909-1-111909-5   Mar 2015   [Refereed]
M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
Appl. Phys. Lett.   106(3)    Jan 2015   [Refereed]
H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q. T. Thieu, R. Togashi, Y. Kumagai, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and A. Koukitu
Appl. Phys. Exp.   8(1)    Jan 2015   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Wong Man Hoi, Kamimura Takafumi, Goto Ken, Nomura Kazushiro, Thieu Quang Tu, Togashi Rie, Murakami Hisashi, Kumagai Yoshinao, Monemar Bo, Koukitu Akinori, Kuramata Akito, Masui Takekazu, Yamakoshi Shigenobu, IEEE
2015 Ieee Compound Semiconductor Integrated Circuit Symposium (Csics)      2015   [Refereed]
Saito Shingo, Onuma Takeyoshi, Sasaki Kohei, Kuramata Akito, Sekine Norihiko, Kasamatsu Akifumi, Higashiwaki Masataka, IEEE
2015 40th International Conference on Infrared, Millimeter and Terahertz Waves (Irmmw-Thz)      2015   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Goto Ken, Nomura Kazushiro, Quang Tu Thieu, Togashi Rie, Murakami Hisashi, Kumagai Yoshinao, Monemar Bo, Koukitu Akinori, Kuramata Akito, Yamakoshi Shigenobu, IEEE
2015 73rd Annual Device Research Conference (Drc)   29-30   2015   [Refereed]
Y. Sugiura, T. Honda, and M. Higashiwaki
J. Cryst. Growth   405 64-67   Aug 2014   [Refereed]
H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck
Appl. Phys. Exp.   7(9) 1-95501   Aug 2014   [Refereed]
T. Kamimura, K. Sasaki, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, S. Yamakoshi, and M. Higashiwaki
Appl. Phys. Lett.   104(19)    May 2014   [Refereed]
T. Onuma, S. Fujioka, T. Yamaguchi, Y. Itoh, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
J. Cryst. Growth   401 330-333   May 2014   [Refereed]
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi
J. Cryst. Growth   392 30-33   Mar 2014   [Refereed]
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi
Phys. Status. Solidi. A   211(1) 21-26   Jan 2014   [Refereed][Invited]
M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi
Appl. Phys. Lett.   103(12)    Sep 2013   [Refereed]
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi
J. Cryst. Growth   378 591-595   Sep 2013   [Refereed]
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi
Appl. Phys. Exp.   6(8) 1-86502   Jul 2013   [Refereed]
T. Onuma, S. Fujioka, T. Yamaguchi, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda
Appl. Phys. Lett.   103(4) 041910   Jul 2013   [Refereed]
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi
IEEE Electron Device Lett.   34(4) 493-495   Apr 2013   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Kamimura Takafumi, Wong Man Hoi, Krishnamurthy Daivasigamani, Kuramata Akito, Masui Takekazu, Yamakoshi Shigenobu, IEEE
2013 71st Annual Device Research Conference (Drc)      2013   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Wong Man Hoi, Kamimura Takafumi, Krishnamurthy Daivasigamani, Kuramata Akito, Masui Takekazu, Yamakoshi Shigenobu, IEEE
2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)      2013   [Refereed]
Higashiwaki Masataka, Sasaki Kohei, Wong Man Hoi, Kamimura Takafumi, Krishnamurthy Daivasigamani, Kuramata Akito, Masui Takekazu, Yamakoshi Shigenobu, IEEE
2013 1st Ieee Workshop on Wide Bandgap Power Devices and Applications (Wipda)   100-103   2013   [Refereed]
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi
Appl. Phys. Lett.   100(1) 13504   Jan 2012   [Refereed]
R. Santhakumar, B. Thibeault, M. Higashiwaki, S. Keller, Z. Chen, U. K. Mishra, and R. York
IEEE Trans. Microw. Theory Tech.   59(8) 2059-2063   Aug 2011   [Refereed]
M. Higashiwaki, Y. Pei, R. Chu, and U. K. Mishra
IEEE Trans. Electron Devices   58(6) 1681-1686   Jun 2011   [Refereed]
L. Gordon, M.-S. Miao, S. Chowdhury, M. Higashiwaki, U. K. Mishra, and C. G. Van de Walle
J. Phys. D   43(50) 1-8   Dec 2010   [Refereed]
M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra
Appl. Phys. Lett.   97(22) 222104   Nov 2010   [Refereed]
M. Higashiwaki, S. Chowdhury, M.-S. Miao, B. L. Swenson, C. G. Van de Walle, and U. K. Mishra
J. Appl. Phys.   108(6) 63719   Sep 2010   [Refereed]
T. Fujiwara, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra
Appl. Phys. Exp.   2(6) 1-61003   Jun 2009   [Refereed]
Y. Pei, S. Rajan, M. Higashiwaki, Z. Chen, S. P. DenBaars, and U. K. Mishra
IEEE Electron Device Lett.   30(4) 313-315   Apr 2009   [Refereed]
M. Higashiwaki, Z. Chen, R. Chu, Y. Pei, S. Keller, U. K. Mishra, N. Hirose, T. Matsui, and T, Mimura
Appl. Phys. Lett.   94(5) 53513   Feb 2009   [Refereed]
T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra
Appl. Phys. Exp.   2(1) 1-11001   Jan 2009   [Refereed]
M. Higashiwaki, T. Mimura, and T. Matsui
IEICE Transactions on Electronics   E91-C(7) 984-988   Jul 2008   [Refereed][Invited]
M. Higashiwaki, T. Mimura, and T. Matsui
Appl. Phys. Exp.   1(2) 1-21103   Feb 2008   [Refereed]
M. Higashiwaki, T. Mimura, and T. Matsui
Thin Solid Films (a)   516(5) 548-552   Jan 2008   [Refereed][Invited]
Higashiwaki Masataka, Mimura Takashi, Matsui Toshiaki
GALLIUM NITRIDE MATERIALS AND DEVICES III   6894 L8941   2008   [Refereed]
Masataka Higashiwaki,Takashi Mimura,Toshiaki Matsui
IEICE Transactions   91-C(7) 984-988   2008   [Refereed]
Higashiwaki Masataka, Mimura Takashi, Matsui Toshiaki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46(20-24) L502   Jun 2007   [Refereed]
M. Higashiwaki, T. Mimura, and T. Matsui
IEEE Trans. Electron Devices   54(6) 1566-1570   Jun 2007   [Refereed]
N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, and T. Matsui
J. Appl. Phys.   101(4) 043703   2007   [Refereed]
M. Higashiwaki, T. Mimura, and T. Matsui
phys. stat. sol. (a)   204(6) 2042-2048   2007   [Refereed][Invited]
N. Onojima, M. Higashiwaki, J. Suda, T. Kimoto, T. Mimura, and T. Matsui
phys. stat. sol. (c)   4(7) 2354-2357   2007   [Refereed]
M. Higashiwaki, T. Mimura and T. Matsui
Jpn. J. Appl. Phys.   45(42-45) 1111-1113   Nov 2006   [Refereed]
M. Higashiwaki, T. Mimura, and T. Matsui
IEEE Electron Device Lett.   27(9) 719-721   Sep 2006   [Refereed]
M. Higashiwaki, N. Onojima, T. Matsui, and T. Mimura
J. Appl. Phys.   100(3)    Aug 2006   [Refereed]
Higashiwaki Masataka, Mimura Takashi, Matsui Toshiaki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45(29-32) L843-L845   Aug 2006   [Refereed]
T. Yamamura, D. Nakamura, M. Higashiwaki, T. Matsui, and A. Sandhu
J. Appl. Phys.   99(8)    Apr 2006   [Refereed]
M. Higashiwaki, T. Matsui, and T. Mimura
IEEE Electron Device Lett.   27(1) 16-18   2006   [Refereed]
M. Higashiwaki, N. Onojima, T. Matsui and T. Mimura
phys. stat. sol. (a)   203(7) 1851-1855   2006   [Refereed]
Inushima T, Kato N, Takenobu T, Motokawa M, Higashiwaki M, Matsui T, Kobayashi N, Toyota N, Motokawa M
Yamada Conference LX on Research in High Magnetic Fields   51 279-282   2006   [Refereed]
T. Inushima, N. Kato, D. K. Maude, H. Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenack, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto, Y. Nanishi, M. Higashiwaki, and T. Matsui
phys. stat. sol. (b)   243(7) 1679-1686   2006   [Refereed][Invited]
M. Higashiwaki and T. Matsui
Jpn. J. Appl. Phys.   44(16-19) L475-L478   2005   [Refereed]
M. Higashiwaki, N. Hirose, and T. Matsui
IEEE Electron Device Lett.   26(3) 139-141   2005   [Refereed]
M. Higashiwaki and T. Matsui
phys. stat. sol. (c)   2(7) 2598-2601   2005   [Refereed]
Y. Yamashita, A. Endoh, K. Ikeda, K. Hikosaka, T. Mimura, M. Higashiwaki, T. Matsui, and S. Hiyamizu
J. Vac. Sci. Technol. B   23(3) 895-899   2005   [Refereed]
Y. Yamashita, A. Endoh, K. Ikeda, K. Hikosaka, T. Mimura, M. Higashiwaki, T. Matsui, and S. Hiyamizu
J. Vac. Sci. Tech. B   23(5) L13-L15   2005   [Refereed]
Higashiwaki M, Matsui T
Japanese Journal of Applied Physics Part 2-Letters & Express Letters   44(16-19) L475-L478   2005   [Refereed]
A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira, and R. Suzuki
J. Appl. Phys.   97(4) 043514   2005   [Refereed]
T. Inushima, M. Higashiwaki, T. Matsui, T. Takenobu, and M. Motokawa
Phys. Rev. B   72(8) 085210   2005   [Refereed]

Conference Activities & Talks

 
Potential applications of wide bandgap semiconducting oxides [Invited]
Masataka Higashiwaki
International Workshop on "Novel Semiconducting Oxides"   Oct 2012   
MBE grown Ga2O3 and its power device applications [Invited]
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi
17th International Conference on Molecular Beam Epitaxy (MBE2012)   Sep 2012   
Interface Control of III-oxide/nitride composite structures [Invited]
M. Higashiwaki, S. Chowdhury, B. R. Swenson, U. K. Mishra, T. Igaki, T. Yamaguchi, and T. Honda
International Conference on Solid State Devices and Materials (SSDM2012)   Sep 2012   
Single-crystal gallium oxide metal-semiconductor field-effect transistors [Invited]
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi
39th International Symposium on Compound Semiconductors (ISCS2012)   Aug 2012   
In-situ RF-MBE growth of AlOx/n-GaN composite structures
M. Higashiwaki, T. Igaki, T. Yamaguchi, and T. Honda
4th International Symposium on Growth of III-Nitrides (ISGN2012)   Jul 2012   
New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes [Invited]
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)   Jun 2012   
Study of Thermal Oxidation Effects on Surface Barrier Height of AlGaN/GaN Heterostructures
M. Higashiwaki, S. Chowdhury, B. L. Swenson, and U. K. Mishra
2010 International Workshop on Nitride Semiconductors (IWN2010)   Sep 2010   
Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers
M. Higashiwaki, Y. Pei, R. Chu, and U. K. Mishra
67th Device Research Conference (DRC2009)   Jun 2009   
GaN HFETs for millimeter-wave technologies [Invited]
M. Higashiwaki, Z. Chen, S. Keller, N. Hirose, T. Mimura, T. Matsui, and U. K. Mishra
35th International Symposium on Compound Semiconductors (ISCS)   Sep 2008   
A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs
M. Higashiwaki, Z. Chen, Y. Pei, R. Chu, S. Keller, N. Hirose, T. Mimura, T. Matsui, and U. K. Mishra
66th Device Research Conference (DRC)   Jun 2008   
Millimeter-wave GaN HFET technology [Invited]
M. Higashiwaki, T. Mimura, and T. Matsui
SPIE Photonic West   Jan 2008   
High-frequency performance of short-gate AlGaN/GaN HFETs on SiC
M. Higashiwaki, T. Mimura, and T. Matsui
Sep 2007   
Development of high-frequency GaN HFETs for millimeter-wave applications [Invited]
M. Higashiwaki, T. Mimura, and T. Matsui
7th Topical Workshop on Heterostructure Microelectronics (TWHM)   Aug 2007   
GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications [Invited]
M. Higashiwaki, T. Mimura, and T. Matsui
4th International Conference on Hot-Wire CVD (Cat-CVD) Process (HWCVD-4)   Oct 2006   
Development of millimeter-wave GaN HFET technology [Invited]
M. Higashiwaki, T. Mimura, and T. Matsui
International Workshop on Nitride Semiconductors (IWN)   Oct 2006   
AlN/GaN MIS-HFETs with Cat-CVD SiN
M. Higashiwaki, T. Mimura, and T. Matsui
33rd International Symposium on Compound Semiconductors (ISCS)   Aug 2006   
30-nm-gate AlGaN/GaN MIS-HFETs with 180 GHz fT
M. Higashiwaki, T. Matsui, and T. Mimura
Jun 2006   
High-frequency AlGaN/GaN HFETs grown by plasma-assisted MBE for millimeter-wave applications [Invited]
M. Higashiwaki, T. Matsui, and T. Mimura
International COE Workshop on Nano Processes and Devices   Dec 2005   
Influence of surface passivation using Cat-CVD SiN on electrical properties of AlGaN/GaN HFETs
M. Higashiwaki, T. Matsui, and T. Mimura
6th International Conference on Nitride Semiconductors (ICNS-6)   Sep 2005   
High fT and fmax AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
M. Higashiwaki and T. Matsui
6th International Conference on Nitride Semiconductors (ICNS-6)   Sep 2005   
High-frequency device performance of sub-0.1-um-gate AlGaN/GaN HFETs grown on sapphire substrates by plasma-assisted MBE
M. Higashiwaki and T. Matsui
6th International Workshop on Heterostructure Microelectronics (TWHM)   Aug 2005   
Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz fT and 184 GHz fmax
M. Higashiwaki, T. Matsui, and T. Mimura
63rd Device Research Conference (DRC)   Jun 2005   

Research Grants & Projects

 
Ministry of Internal Affairs and Communications: Strategic Information and Communications R&D Promotion Programme (SCOPE)
Project Year: Apr 2018 - Mar 2021    Investigator(s): Masataka HIGASHIWAKI
Cabinet Office, Goverment of Japan: Cross-ministerial Strategic Innovation Promotion Program (SIP)
Project Year: Oct 2014 - Feb 2019    Investigator(s): Masataka HIGASHIWAKI
Interface control and device application of III-oxide/nitride semiconductor composite structures
Japan Science and Technology Agency: PRESTO
Project Year: Apr 2010 - Mar 2013    Investigator(s): Masataka Higashiwaki