2005年9月
Improvement of the thickness distribution of a quartz crystal wafer by numerically controlled plasma chemical vaporization machining
Review of Scientific Instruments
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- 巻
- 76
- 号
- 9
- 開始ページ
- 096103
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.2041594
To improve the thickness uniformity of thin quartz crystal wafer, a new machining process that utilizes an atmospheric pressure plasma was developed. In an atmospheric pressure plasma process, since the kinetic energy of ions that impinge to the wafer surface is small and the density of the reactive species is large, high-efficiency machining without damage is realized, and the thickness distribution is corrected by numerically controlled scanning of the quartz wafer to the localized high-density plasma. By using our developed machining process, the thickness distribution of an AT cut wafer was improved from 174 nm [peak to valley (p-v)] to 67 nm (p-v) within 94 s. Since there are no unwanted spurious modes in the machined quartz wafer, it was proved that the developed machining method has a high machining efficiency without any damage. © 2005 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2041594
- ISSN : 0034-6748
- SCOPUS ID : 25844492510