TAKEUCHI Misaichi

J-GLOBAL         Last updated: Sep 12, 2013 at 11:28
 
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Name
TAKEUCHI Misaichi

Research Areas

 
 

Academic & Professional Experience

 
 
   
 
Associate Professor, Ritsumeikan University Ritsumeikan-Global Innovation Research Organization, Ritsumeikan-Global Innovation Research Organization
 

Education

 
 
 - 
1992
"Graduate School, Division of Engineering Science", Osaka University
 
 
 - 
1996
"Graduate School, Division of Engineering Science", Osaka University
 
 
 - 
1990
Faculty of Engineering Science, Osaka University
 

Misc

 
M. Takeuchi, T. Maegawa, H. Shimizu, S. Ooishi, T. Ohtsuka, Y. Aoyagi
Appl. Phys. Lett.   94(6) 061117   2009
T. Nanjo, M. Takeuchi, M. Suita, T. Oishi, Y. Abe, Y. Tokuda, Y. Aoyagi
Appl. Phys. Lett.   92(26) 263502   2008
M. Takeuchi, S. Ooishi, T. Ohtsuka, T. Maegawa, T. Koyama, S. Chichibu, Y. Aoyagi
Appl. Phys. Express   1 021102   2008
T. Nanjo, M. Takeuchi, M. Suita, Y. Abe, T. Oishi, Y. Tokuda, Y. Aoyagi
Appl. Phys. Express   1 011101   2008
R. Kajitani, M. Takeuchi, Y. Aoyagi
Jpn. J. Appl. Phys.   47(1) 47   2008

Conference Activities & Talks

 
N-polar AlN sacrificial layers grown by MOCVD for free-standing AlN substrates
5th International Workshop on Bulk Nitride Semiconductors (IWBNS-5, Salvador, Brazil)   2007   
Polarity dependent of AlN {0001} decomposition in flowing H2
4th International Workshop on Bulk Nitride Semiconductors (IWBNS-4, Shiga, Japan)   2006   
Improvement of crystalline quality for Al- and N-polar AlN layers by modified flow-modulation MOCVD growth
4th International Workshop on Bulk Nitride Semiconductors (IWBNS-4, Shiga, Japan)   2006   
Photonic crystal and III-N quantum dot laser
Conference on lasers and Electro-Optics (CLE03, art. No. CTh03, pp.1796-1798)   2005   

Research Grants & Projects

 
Development of deep UV light emittiers using III-Nitride semiconductors
Development of high-power electrical devices using III-Nitride semiconductors