Based on the microscopic mechanisms of (1) charge-excitation-induced negative effective $U$ in $s^{1}$ or $d^{9}$ electronic configurations, and (2) exchange-correlation-induced negative effective $U$ in $d^{4}$ or $d^{6}$ electronic configurations, we propose a general rule and materials design of negative effective $U$ system in itinerant (ionic and metallic) system for the realization of high-$T_{\text{c } }$ superconductors. We design a $T_{\text{c } }$-enhancing layer (or clusters) of charge-excitation-induced negative effective $U$ connecting the superconducting layers for the realistic systems.