2008年
Cleaning of gold interconnection surface by low-temperature hydrogen annealing for MEMS device fabrication
ECS Transactions
- ,
- ,
- ,
- ,
- ,
- 巻
- 16
- 号
- 14
- 開始ページ
- 29
- 終了ページ
- 35
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1149/1.2992225
A technique for cleaning a gold surface using a dry process is described for the fabrication of microelectromechanical system (MEMS) devices. X-ray photoelectron spectroscopy (XPS) shows that gold is oxidized after exposure to oxygen plasma used for ashing of organic contaminants or etching of a sacrificial-layer film. On such oxidized gold surface, there are different incubations at the different places, which give rise to non-uniform thickness in film growth by electrochemical techniques, such as electrodeposition and electroplating. A surface analysis by thermal desorption spectroscopy (TDS) revealed that annealing causes oxygen to desorb from the gold oxide. The surfaces were annealed in a vacuum or nitrogen or hydrogen ambient to examine the effectiveness of dry-process surface cleaning. For the annealing in a vacuum and nitrogen ambient, a temperature of over 260°C is necessary for the oxide removal. Annealing in hydrogen ambient drastically lowers the cleaning temperature from 260 to 110°C. ©The Electrochemical Society.
- リンク情報
- ID情報
-
- DOI : 10.1149/1.2992225
- ISSN : 1938-5862
- ISSN : 1938-6737
- eISSN : 1938-6737
- SCOPUS ID : 66649114578