論文

2018年5月1日

Type-II HfS<inf>2</inf>/MoS<inf>2</inf>heterojunction transistors

IEICE Transactions on Electronics
  • Seiko Netsu
  • ,
  • Toru Kanazawa
  • ,
  • Teerayut Uwanno
  • ,
  • Tomohiro Amemiya
  • ,
  • Kosuke Nagashio
  • ,
  • Yasuyuki Miyamoto

E101C
開始ページ
338
終了ページ
342
DOI
10.1587/transele.E101.C.338

© 2018 The Institute of Electronics, Information and Communication Engineers. We experimentally demonstrate transistor operation in a vertical p+MoS2/n-HfS2van der Waals (vdW) heterostructure configuration for the first time. The HfS2/MoS2heterojunction transistor exhibits an ON/OFF ratio of 104 and a maximum drain current of 20 nA. These values are comparable with the corresponding reported values for vdW heterojunction TFETs. Moreover, we study the effect of atmospheric exposure on the subthreshold slope (SS) of the HfS2/MoS2transistor. Unpassivated and passivated devices are compared in terms of their SS values and IDS- VGS hysteresis. While the unpassivated HfS2/MoS2heterojunction transistor exhibits a minimum SS value of 2000 mV/dec, the same device passivated with a 20-nm-thick HfO2 film exhibits a significantly lower SS value of 700 mV/dec. HfO2 passivation protects the device from contamination caused by atmospheric moisture and oxygen and also reduces the effect of surface traps. We believe that our findings will contribute to the practical realization of HfS2-based vdW heterojunction TFETs.

リンク情報
DOI
https://doi.org/10.1587/transele.E101.C.338
Scopus
https://www.scopus.com/record/display.uri?eid=2-s2.0-85046452805&origin=inward
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85046452805&origin=inward