論文

2018年2月1日

20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate

Applied Physics Express
  • Zhichen Gu
  • ,
  • Daisuke Inoue
  • ,
  • Tomohiro Amemiya
  • ,
  • Tomohiro Amemiya
  • ,
  • Nobuhiko Nishiyama
  • ,
  • Nobuhiko Nishiyama
  • ,
  • Shigehisa Arai
  • ,
  • Shigehisa Arai

11
DOI
10.7567/APEX.11.022102

© 2018 The Japan Society of Applied Physics. A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 μm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.

リンク情報
DOI
https://doi.org/10.7567/APEX.11.022102
Scopus
https://www.scopus.com/record/display.uri?eid=2-s2.0-85042659263&origin=inward
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85042659263&origin=inward