Feb 1, 2018
20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate
Applied Physics Express
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- Volume
- 11
- Number
- 2
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.7567/APEX.11.022102
- Publisher
- Japan Society of Applied Physics
A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 μm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9 is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.
- Link information
- ID information
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- DOI : 10.7567/APEX.11.022102
- ISSN : 1882-0786
- ISSN : 1882-0778
- SCOPUS ID : 85042659263