2011年8月
Design and fabrication of PZT microcantilevers with freestanding structure
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
- ,
- ,
- 巻
- 17
- 号
- 8
- 開始ページ
- 1393
- 終了ページ
- 1400
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1007/s00542-011-1317-8
- 出版者・発行元
- SPRINGER
For developing freestanding piezoelectric microcantilevers with low resonant frequency, some critical mechanical considerations, especially cantilever bending, were given in this study. Two strategies, using piezoelectric thick films and adding a stress compensation layer, were calculationally analyzed for mitigating the cantilever bending, and then was applied for the fabrication of PZT freestanding microcantilevers. (100) oriented PZT thick films with the thickness of 6.93 mu m were grown on the Pt/SiO2/Si substrate by chemical solution deposition (CSD), and the SiO2 layer with the thickness of 1.0 mu m was kept under the PZT layer as a stress compensation layer of the freestanding microcantilevers. The freestanding microcantilevers fabricated with the micromachining process possessed the resonant frequency of 466.1 Hz, and demonstrated no obvious cantilever bending.
- リンク情報
- ID情報
-
- DOI : 10.1007/s00542-011-1317-8
- ISSN : 0946-7076
- eISSN : 1432-1858
- Web of Science ID : WOS:000292834100015