2013年9月8日
S133012 Siのエッチング援用スライスにおける切断特性の向上([S133]先進砥粒加工技術)
年次大会 : Mechanical Engineering Congress, Japan
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- 巻
- 2013
- 号
- 開始ページ
- "S133012
- 終了ページ
- 1"-"S133012-3"
- 記述言語
- 日本語
- 掲載種別
- 出版者・発行元
- 一般社団法人日本機械学会
Si wafers for solar cells are fabricated by slicing ingot using mechanical slicing method such as multi-wire sawing. Recently, the slicing method for achieving low kerf loss and thin wafer without generating subsurface damage is strongly required because of the increasing demand of low-cost Si wafers. The etching-assisted slicing method is abrasive free machining process employing chemical etching of Si. The method can achieve a lower kerf loss than the mechanical slicing and damage-free Si surface. In this paper, the removal characteristics of Si ingot are discussed under the different slicing conditions.
- リンク情報
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- CiNii Articles
- http://ci.nii.ac.jp/naid/110009934244
- CiNii Books
- http://ci.nii.ac.jp/ncid/AA12588255
- ID情報
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- CiNii Articles ID : 110009934244
- CiNii Books ID : AA12588255