2016年2月
Improvement of on/off ratio in organic field-effect transistor with carrier generation layer using oblique deposition
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 55
- 号
- 2
- 開始ページ
- 02BB06.1
- 終了ページ
- 02BB06.4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.55.02BB06
- 出版者・発行元
- IOP PUBLISHING LTD
Improvement of the on/off ratio in carrier-generation type organic field-effect transistors with pentacene and MoO3 layers was attempted using oblique deposition. A MoO3 layer was formed only between the gold (Au) source and the drain electrodes, and devices with a MoO3 layer evaporated under various deposition angles were fabricated. A formation of a MoO3-free area is expected adjacent to the source or drain electrode by the oblique deposition. The off-current in the device decreased and the on/off ratio was increased with increasing deposition angle, and we achieved a fabricating device with a MoO3 layer having high on/off ratio, almost the same as that of the device without the MoO3 layer. From those results, we deduced that charge-transfer (CT) complexes at the pentacene/MoO3 interface formed a high-conductive path for the off-current, and the off-current was reduced by the formation of a highly-resistive MoO3-free area between electrodes. Therefore, controlling the CT complex layer formation by patterning the MoO3 layer can reduce the amount of off-current and improve the on/off ratio. (C) 2016 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.55.02BB06
- ISSN : 0021-4922
- eISSN : 1347-4065
- Web of Science ID : WOS:000369217000008