OGAWA Shuichi Last updated: Jan 11, 2020 at 10:33
Academic & Professional Experience
Nov 2018
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Apr 2019
Visiting Scholar, Faculty of Engineering, National University of Singapore
Apr 2010
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Today
助教, 東北大学多元物質科学研究所
Jan 2016
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Sep 2016
Fritz Habor Institute
Jun 2008
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Mar 2010
産学官連携研究員、助教（研究特任）, 東北大学多元物質科学研究所
Apr 2008
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May 2008
日本学術振興会特別研究員, 東北大学
Education
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Mar 2008
ナノメカニクス専攻, Graduate School, Division of Engineering, Tohoku University
Committee Memberships
Apr 2017
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Today
応用物理学会 プログラム編集委員（6.5表面物理・真空担当）
Mar 2017
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Today
The 14th Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures Local committee
Apr 2016
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Today
日本表面科学会 広報・会員増強・市民講座委員会 委員
Apr 2015
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Today
日本表面科学会 東北・北海道支部 幹事
Apr 2011
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Mar 2016
日本表面科学会 広報・市民講座委員会 委員
Awards & Honors
Dec 2010
光電子制御プラズマCVDを用いた多層グラフェン成長プロセスの開発, 第5回 籏野奨学基金多元物質科学研究奨励賞, 東北大学多元物質科学研究所
Feb 2009
熱酸化プロセスによる極薄シリコン酸化膜形成過程の研究, 第25回井上研究奨励賞, 財団法人井上科学振興財団
Mar 2008
平成19年度東北大学総長賞, 東北大学
Nov 2007
リアルタイム光電子分光観察を用いた表面研究, 第16回真空進歩賞, 日本真空協会
Sep 2007
Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy, 第29回応用物理学会論文賞（JJAP論文奨励賞）, 社団法人応用物理学会
Published Papers
Saijian Ajia, Shuichi Ogawa, Nobuhisa Kamata, and Yuji Takakuwa
Japanese Journal of Applied Physics 58(9) 090911/1-5 Aug 2019 [Refereed]
© 2019 The Japan Society of Applied Physics Copper surfaces with an initial root mean square roughness of 2–5 nm were processed by a photoemission-assisted plasma ion source. When
Shuichi Ogawa, Takatoshi Yamada, Ryo Kadowaki, Takashi Taniguchi, Tadashi Abukawa, and Yuji Takakuwa
Journal of Applied Physics 125(14) 144303/1-7 Apr 2019 [Refereed]
Because graphene stacked on hexagonal boron nitride (h-BN) exhibits high electron mobility, it is expected to be applied to next-generation high-speed transistors and electron emitters. To further improve the performance of graphene/h-BN devices, ...
Shuichi Ogawa, Yuji Takakuwa
AIP Advances 8 075119 Jul 2018 [Refereed]
© 2018 Author(s). In the thermal oxidation reaction of Si, point defects (emitted Si atoms and its vacancies) occur owing to oxidation-induced strain. These point defects become not only charge traps that degrade device characteristics but also ox...
Yoshimi Horio, Junji Yuhara, Yuji Takakuwa, Shuichi Ogawa, Koji Abe
Japanese Journal of Applied Physics 57 045701 Apr 2018 [Refereed]
© 2018 The Japan Society of Applied Physics. We measured rocking curves of reflection high-energy electron diffraction (RHEED) from ZnO(0001) polar surfaces. It was found that the rocking curves for each Zn- and O-terminated surface differ conside...
Shuichi Ogawa, Rintaro Sugimoto, Nobuhisa Kamata, Yuji Takakuwa
Surface and Coatings Technology 350 863-867 Apr 2018 [Refereed]
© 2018 Elsevier B.V. In this study, we tried to decrease the hydrogen content in diamond-like carbon (DLC) grown by photoemission-assisted plasma enhanced chemical vapor deposition (PA-PECVD) using Ar/CH4mixed with CO2. When the CO2flux was change...
S. Ogawa, J. Tang, A. Yoshigoe, S. Ishidzuka, Y. Takakuwa
The Journal of Chemical Physics 145(11) 114701-1-7 Sep 2016 [Refereed]
Shuichi Ogawa, Jiayi Tang, Yuji Takakuwa
AIP Advances 5(8) 087146/1-7 Aug 2015 [Refereed]
高桑 雄二, 小川 修一
精密工学会誌 80(5) 429-432 May 2014 [Refereed][Invited]
Shuichi Ogawa, Jiayi Tang, Akitaka Yoshigoe, Shinji Ishidzuka, Yuden Teraoka, Yuji Takakuwa
Japanese Journal of Applied Physics 52(11) 110128 Nov 2013 [Refereed][Invited]
T. Masuzawa, I. Saito, T. Yamada, M. Onishi, H. Yamaguchi, Y. Suzuki, K. Oonuki, N. Kato, S. Ogawa, Y. Takakuwa, A. T. T. Koh, D. H. C. Chua, Y. Mori, T. Shimosawa, K. Okano
Sensors 13(10) 13744-13778 Oct 2013 [Refereed]
Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition...
Misc
Takatoshi Yamada, Tomoaki Masuzawa, Yoichiro Neo, Hidenori Mimura, Shuichi Ogawa, Yuji Takakuwa, Ken Okano
2017 30th International Vacuum Nanoelectronics Conference, IVNC 2017 20-21 Sep 2017 [Refereed]
© 2017 IEEE. Energies of emitted electrons from n-type diamond NEA surface and graphene/n-type diamond junction were measured by combined field emission spectroscopy/ultraviolet photoelectrons spectroscopy (FES/UPS) system. For n-type diamond NEA ...
Comparison of Photoemission-assisted plasma discharge characteristics between n-type and p-type diamond surfaces
Mayuri Kawata, Atsuko Ohno, Shuichi Ogawa, Yuji Takakuwa
Proceedings of the thirteenth International Symposium on Sputtering and Plasma Processes 202-204 Jul 2015 [Refereed]
1592
Estimate of Critical Ion Energy for Surface Planarization Process Using Photoemission-Assisted Plasma Ion Source
Yuki Kotanigawa, Ajia Saijan, Shuichi Ogawa, Yuji Takakuwa
Proceedings of the thirteenth International Symposium on Sputtering and Plasma Processes 75-78 Jul 2015 [Refereed]
1593
Ion incident energy dependence for Cu surface smoothing using Ar+ ions generated by photoemission-assisted plasma
Saijian Ajia, Yuki Kotanigawa, Yudai Ohtomo, Shuichi Ogawa, Yuji Takakuwa
Proceedings of the thirteenth International Symposium on Sputtering and Plasma Processes 319-322 Jul 2015 [Refereed]
1591
学会だより～ICDCM2014
徳田 規夫, 近藤 剛史, 児玉 英之, 小川 修一, 尾白 佳大, 土井 悠生
NEW DIAMOND 30(4) 34 Oct 2014 [Invited]
Books etc
グラフェンが拓く材料の新領域 -物性・作製法から実用化まで-
高桑雄二, 小川修一 (Part:Joint Work, 第3編第1章第3節 pp.51-64)
エヌ・ティー・エス Jun 2012 ISBN:978-4-86469-035-5
Conference Activities & Talks
Rapid-temperature-rising induced reduction of NiO film grown on Ni(111) surface
Bingruo Zhang,Nobuhisa Kamata, Shuichi Ogawa, Akitaka Yoshigoe, Yuji Takakuwa
18 Sep 2019
Morphology changes of Cu surfaces by comparison of Ar+ and Xe+ ion irradiation induced by photoemission-assisted plasma
Saijian AJIA, Nobuhisa Kamata, Shuichi Ogawa, Yuji Takakuwa
18 Sep 2019
Mechanism of subnanometer level flattening of Cu surfaces with low energy Xe+ ions
Nobuhisa Kamata, Saijian Ajia, Shuichi Ogawa, Yuji Takakuwa
21st International Vacuum Congress 1 Jul 2019
Photo-Induced Enhancement of Oxidation on p- and n-type Si(001) surfaces
Y. Sekihata, S. Ogawa, Y. Akitaka, R. Taga, A. Klyushin, E. Carbonio, A. Knop-Gericke, Y. Takakuwa
2017 International Workshop on Dielectric Thin Films for Future Electron Devices 22 Nov 2017
Photoemission-assisted plasma CVD growth of N-doped diamond like carbon films on Si substrates
S. Hashimoto, R. Sugimoto, S. Ogawa, Y. Takakuwa
39th International Symposium on Dry Process 16 Nov 2017
Real-time Photoelectron Spectroscopy Observation of Oxidation and Reduction Kinetics of Ni(111) Surface
R. Taga, S. Ogawa, Y. Takakuwa
AVS 64th International Symposium & Exhibition 2017 30 Oct 2017
O2 Pressure Dependence of SiO2/Si Interfacial Oxidation Rate Studied by Real-time Photoelectron Spectroscopy
S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Takakuwa
AVS 64th International Symposium & Exhibition 2017 30 Oct 2017
Comparison of Initial Oxidation Kinetics between p- and n-type Si(001) Surfaces Studied by Real-time Photoelectron Spectroscopy
Y. Sekihata, S. Ogawa, A. Yoshigoe, R. Taga, S. Ishidzuka, Y. Takakuwa
AVS 64th International Symposium & Exhibition 2017 30 Oct 2017
Mechanism of initial thermal oxidation on Si(113) surfaces
A. Ogawa, H. Tanaka, S. Ohno, M. Tanaka, K. Miki, S. Ogawa, Y. Takakuwa
The 8th International Symposium on Surface Science 25 Oct 2017
Temperature Dependence of Thermal Reduction Kinetics of Oxidized Ni(111) Surfaces Studied by in-situ UPS and XPS
R. Taga, S. Ogawa, Y. Takakuwa
The 8th International Symposium on Surface Science 23 Oct 2017
