2017年7月
Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
NANOSCALE
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- 巻
- 9
- 号
- 27
- 開始ページ
- 9386
- 終了ページ
- 9395
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1039/c7nr03495d
- 出版者・発行元
- ROYAL SOC CHEMISTRY
A theoretical study of an interfacial phase change memory made of a GeTe-Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism. The ferro structure of the GeTe layer block in the Te-Ge-Te-Ge sequence can be in the low resistance state only if the SET/RESET mode consists of a two step dynamical process, corresponding to a vertical flip of the Ge layer with respect to the Te layer, followed by lateral motion driven by thermal relaxation. The importance of spin-orbit coupling at the GeTe/Sb2Te3 interface to the "bias polarity-dependent" SET/RESET operation is shown, and an analysis of the two-dimensional states confined at the GeTe/Sb2Te3 interface inside the resistive switching layer is presented. Our results allow us to propose a phase diagram for the transition from a topologically nontrivial to a trivial gap state of these two-dimensional compounds.
- リンク情報
- ID情報
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- DOI : 10.1039/c7nr03495d
- ISSN : 2040-3364
- eISSN : 2040-3372
- ORCIDのPut Code : 51221031
- Web of Science ID : WOS:000405387100016