Hisao Nakamura

Profile Information

Affiliation: National Institute of Advanced Industrial Science and Technology

J-GLOBAL ID: 201001033571899820
researchmap Member ID: 6000025067

External link: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H79800437

Research Interests

第一原理電気伝導計算ナノエレクトロニクス分子デバイス量子化学反応動力学

Research Areas

Papers

Water Splitting Induced by Visible Light at a Copper-Based Single-Molecule Junction

Risa Fukuzumi, Marius Buerkle, Yu Li, Satoshi Kaneko, Peihui Li, Shuji Kobayashi, Shintaro Fujii, Manabu Kiguchi, Hisao Nakamura, Kazuhito Tsukagoshi …

Small, 17(28), Jul 15, 2021
Identifying the molecular adsorption site of a single molecule junction through combined Raman and conductance studies

Satoshi Kaneko, Enrique Montes, Sho Suzuki, Shintaro Fujii, Tomoaki Nishino, Kazuhito Tsukagoshi, Katsuyoshi Ikeda, Hideaki Kano, Hisao Nakamura, H{\'{e } }ctor …

Chemical Science, 10(25) 6261-6269, 2019 Peer-reviewed
A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb<inf>2</inf>Te<inf>3</inf> Chalcogenide Superlattices

Junji Tominaga, Yuta Saito, Kirill Mitrofanov, Nobuki Inoue, Paul Fons, Alexander V. Kolobov, Hisao Nakamura, Noriyuki Miyata

Advanced Functional Materials, 27(40), Oct 26, 2017 Peer-reviewed
Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

Hisao Nakamura, Ivan Rungger, Stefano Sanvito, Nobuki Inoue, Junji Tominaga, Yoshihiro Asai

NANOSCALE, 9(27) 9386-9395, Jul, 2017 Peer-reviewed
Resolving metal-molecule interfaces at single-molecule junctions

Yuki Komoto, Shintaro Fujii, Hisao Nakamura, Tomofumi Tada, Tomoaki Nishino, Manabu Kiguchi

SCIENTIFIC REPORTS, 6, May, 2016 Peer-reviewed
Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models

Hisao Nakamura, Yoshihiro Asai

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 18(13) 8820-8826, Apr, 2016 Peer-reviewed
The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport

Xiaoliang Zhong, Ivan Rungger, Peter Zapol, Hisao Nakamura, Yoshihiro Asai, Olle Heinonen

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 18(10) 7502-7510, Mar, 2016 Peer-reviewed
Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics

Satoshi Kaneko, Daigo Murai, Santiago Marques-Gonzalez, Hisao Nakamura, Yuki Komoto, Shintaro Fujii, Tomoaki Nishino, Katsuyoshi Ikeda, Kazuhito Tsukagoshi, Manabu Kiguchi

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 138(4) 1294-1300, Feb, 2016 Peer-reviewed
Adsorption Site Recognition in Single Molecular Junctions Spectroscopy

Satoshi KANEKO, Daigo MURAI, Yuki KOMOTO, Shintaro FUJII, Hisao NAKAMURA, Manabu KIGUCHI

Hyomen Kagaku, 37(7) 288-293, 2016
Temperature dependence of the thermopower and its variation of the Au atomic contact

Ryuji Matsushita, Satoshi Kaneko, Shintaro Fujii, Hisao Nakamura, Manabu Kiguchi

NANOTECHNOLOGY, 26(4), Jan, 2015 Peer-reviewed
Influence of surface polarity on water dynamics at the water/rutile TiO2(110) interface

Tatsuhiko Ohto, Ankur Mishra, Seiji Yoshimune, Hisao Nakamura, Mischa Bonn, Yuki Nagata

JOURNAL OF PHYSICS-CONDENSED MATTER, 26(24), Jun, 2014 Peer-reviewed
Single Molecular Resistive Switch Obtained via Sliding Multiple Anchoring Points and Varying Effective Wire Length

Manabu Kiguchi, Tatsuhiko Ohto, Shintaro Fujii, Kazunori Sugiyasu, Shigeto Nakajima, Masayuki Takeuchi, Hisao Nakamura

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 136(20) 7327-7332, May, 2014 Peer-reviewed
Additive Electron Pathway and Nonadditive Molecular Conductance by Using a Multipodal Bridging Compound

Manabu Kiguchi, Yuuta Takahashi, Shintaro Fujii, Masayoshi Takase, Tomoyuki Narita, Masahiko Iyoda, Masayo Horikawa, Yasuhisa Naitoh, Hisao Nakamura

JOURNAL OF PHYSICAL CHEMISTRY C, 118(10) 5275-5283, Mar, 2014 Peer-reviewed
Non-Equilibrium Transport Theory Applied to Nano Electronics Problems

Y. Asai, H. Nakamura

NONVOLATILE MEMORIES 3, 64(14) 61-67, 2014 Peer-reviewed
Design of ReRAM Cell Structure by Metal Buffer and Contact Engineering via First-Principles Transport Calculations

Hisao Nakamura, Takehide Miyazaki, Kengo Nishio, Hisashi Shmia, Hiroyuki Akinaga, Yoshihiro Asai

2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2014 Peer-reviewed
Thermoelectric Efficiency of Organometallic Complex Wires via Quantum Resonance Effect and Long-Range Electric Transport Property

Hisao Nakamura, Tatsuhiko Ohto, Takao Ishida, Yoshihiro Asai

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 135(44) 16545-16552, Nov, 2013 Peer-reviewed
Universal Medium-Range Order of Amorphous Metal Oxides

Kengo Nishio, Takehide Miyazaki, Hisao Nakamura

PHYSICAL REVIEW LETTERS, 111(15), Oct, 2013 Peer-reviewed
Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

Tatsuhiko Ohto, Ivan Rungger, Koichi Yamashita, Hisao Nakamura, Stefano Sanvito

Physical Review B - Condensed Matter and Materials Physics, 87(20), May 28, 2013 Peer-reviewed
First-principles modeling for current-voltage characteristics of resistive random access memories

Takehide Miyazaki, Hisao Nakamura, Kengo Nishio, Hisashi Shima, Hiroyuki Akinaga, Yoshihiro Asai

Journal of Mechanics, 1562(3), Apr 22, 2013 Peer-reviewed
Controlling Formation of Single-Molecule Junctions by Electrochemical Reduction of Diazonium Terminal Groups

Thomas Hines, Ismael Diez-Perez, Hisao Nakamura, Tomomi Shimazaki, Yoshihiro Asai, Nongjian Tao

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 135(9) 3319-3322, Mar, 2013

Misc.

二酸化ハフニウムを用いた抵抗変化メモリの電気伝導特性に関する第一原理計算

宮崎剛英, 中村恒夫, 西尾憲吾, 島久, 秋永広幸, 浅井美博

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 74th ROMBUNNO.20P-D6-8, Aug 31, 2013
27pXZA-3 Dynamics of STR-Induced Switching of Melamine/Cu(001) based on First-Principles Calculations

Ohto Tatsuhiko, Rungger Ivan, Yamashita Koichi, Nakamura Hisao, Sanvito Stefano

Meeting abstracts of the Physical Society of Japan, 68(1) 994-994, Mar 26, 2013
27aXZA-9 Molecular modeling at liquid/solid interface and molecular dynamics simulation of SFG at water/TiO_2

Nakamura Hisao, Ohto Tatsuhiko, Nagata Yuki

Meeting abstracts of the Physical Society of Japan, 68(1) 988-988, Mar 26, 2013
計算シミュレーション技術の活用と産業普及への取り組み動作電圧の極低電圧化を目指した抵抗変化型メモリーのオン・オフ機構の理論解明

宮崎剛英, 中村恒夫, 西尾憲吾, 浅井美博, 島久, 秋永広幸

産総研TODAY(Web), 13(2) 8 (WEB ONLY), Feb, 2013
23aGP-3 First-principle study of carrier transport at the PTCDA/Ag(111) interface

Ohto Tatsuhiko, Nakamura Hisao, Yamashita Koich

Meeting abstracts of the Physical Society of Japan, 65(1) 962-962, Mar 1, 2010
25pYA-12 First-principle study of surface Charge Density Waves of Metal Surfaces

Ohto Tatsuhiko, Nojima Akihiro, Nakamura Hisao, Yamashita Koich

Meeting abstracts of the Physical Society of Japan, 64(2) 692-692, Aug 18, 2009

Profile Information

Research Interests

Research Areas

Papers

Misc.

Professional Memberships

Menu

Coauthors