2019年4月
Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy
Journal of Crystal Growth
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- 巻
- 512
- 号
- 開始ページ
- 37
- 終了ページ
- 40
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jcrysgro.2019.02.008
- 出版者・発行元
- Elsevier {BV}
© 2019 In this work Ga adatom incorporation diffusion length was quantified in two different directions, 〈1 1 0〉 and <11¯0> during MBE growth of a GaP layer. Thickness distribution was measured for the GaP layer grown on striped patterned GaP substrate and the data was analyzed based on a one-dimensional diffusion growth model between two different adjacent facets. It was quantitatively revealed that the diffusion length of the Ga adatoms increased with growth temperature and an anisotropy in the diffusion length was observed along <110> and <11¯0> directions. The influence in the morphology due to the diffusion length anisotropy was discussed with the RHEED patterns.
- リンク情報
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- DOI
- https://doi.org/10.1016/j.jcrysgro.2019.02.008
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000460040600007&DestApp=WOS_CPL
- Scopus
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85061174788&origin=inward
- Scopus Citedby
- https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85061174788&origin=inward
- URL
- http://orcid.org/0000-0002-0692-9975
- ID情報
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- DOI : 10.1016/j.jcrysgro.2019.02.008
- ISSN : 0022-0248
- ORCIDのPut Code : 55971577
- SCOPUS ID : 85061174788
- Web of Science ID : WOS:000460040600007