2017年7月
Growth of a lattice-matched GaAsPN p-i-n junction on a Si substrate for monolithic III-V/Si tandem solar cells
APPLIED PHYSICS EXPRESS
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- 巻
- 10
- 号
- 7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.10.075504
- 出版者・発行元
- IOP PUBLISHING LTD
A p-i-n GaAs0.75P0.19N0.06 structure lattice-matched to Si was realized on a 2-in. Si (001) substrate for monolithic tandem solar cells. The sample structure had mirror-like surfaces without any indication of pinholes or microcracks. X-ray diffraction results showed that all the layers were coherently grown on the Si substrate. Transmission electron microscopy results evidently showed that a dislocation-free device structure was grown on the Si substrate. Finally, current-voltage characteristics showed rectifying properties with low reverse saturation current, which was indicative of the high crystallinity of the device layer. (C) 2017 The Japan Society of Applied Physics
- リンク情報
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- DOI
- https://doi.org/10.7567/APEX.10.075504
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000404153200001&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85021810315&origin=inward
- ID情報
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- DOI : 10.7567/APEX.10.075504
- ISSN : 1882-0778
- eISSN : 1882-0786
- SCOPUS ID : 85021810315
- Web of Science ID : WOS:000404153200001