八木英樹 (Hideki Yagi) - マイポータル

基本情報

所属: 独立行政法人科学技術振興機構ナノ超高速・超省電力高性能ナノデバイス・システムの創製研究員

学位: 工学修士(東京工業大学)

J-GLOBAL ID: 200901001189908053
researchmap会員ID: 1000325651

研究分野

ナノテク・材料 / 光工学、光量子科学 /

経歴

2004年

独立行政法人科学技術振興機構研究員現在に至る

学歴

委員歴

2001年

応用物理学会, 正会員

MISC

GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes

H Yagi, T Sano, K Ohira, D Plumwongrot, T Maruyama, A Haque, S Tamura, S Arai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43(6A) 3401-3409 2004年6月
GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors

Hideki Yagi, Takuya Sano, Koji Miura, Dhanorm Plumwongrot, Kazuya Ohira, Takeo Maruyama, Shigehisa Arai, Hideki Yagi, Takeo Maruyama, Shigehisa Arai

IEICE Electronics Express 1(17) 540-544 2004年
Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method

H Yagi, T Sano, K Ohira, T Maruyama, A Haque, S Arai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(7A) L748-L750 2003年7月
Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH4/H-2 dry etching and regrowth

H Yagi, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

APPLIED PHYSICS LETTERS 81(6) 966-968 2002年8月
Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH4/H-2 dry etching and regrowth

H Yagi, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

APPLIED PHYSICS LETTERS 81(6) 966-968 2002年8月
GaInAsP/InP strain-compensated quantum-wire lasers fabricated by CH4/H-2 dry etching and organometallic vapor-phase-epitaxial regrowth

H Yagi, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(2B) L186-L189 2002年2月
GaInAsP/InP strain-compensated quantum-wire lasers fabricated by CH4/H-2 dry etching and organometallic vapor-phase-epitaxial regrowth

H Yagi, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(2B) L186-L189 2002年2月
GaInAsP/InP Multiple-Quantum-Wire Lasers by CH4/H2 Reactive Ion Etching

7th OptoElectronics and Communications Conference (OECC2002) 158-159 2002年
Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

Hideki Yagi, Kengo Muranushi, Nobuhiro Nunoya, Takuya Sano, Shigeo Tamura, Shigehisa Arai

Conference Proceedings-International Conference on Indium Phosphide and Related Materials 723-726 2002年
GaInAsP/InP Multiple-Quantum-Wire Lasers by CH4/H2 Reactive Ion Etching

7th OptoElectronics and Communications Conference (OECC2002) 158-159 2002年
Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

Hideki Yagi, Kengo Muranushi, Nobuhiro Nunoya, Takuya Sano, Shigeo Tamura, Shigehisa Arai

Conference Proceedings-International Conference on Indium Phosphide and Related Materials 723-726 2002年
1.5 mu m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH4/H-2 dry etching and regrowth

H Midorikawa, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS 407-408 2001年
1.5 mu m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH4/H-2 dry etching and regrowth

H Midorikawa, K Muranushi, N Nunoya, T Sano, S Tamura, S Arai

LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS 407-408 2001年

所属学協会

応用物理学会

共同研究・競争的資金等の研究課題

歪補償量子井戸構造を用いるGaInAsP/InP多層量子細線レーザに関する研究

1999年 - 2007年
歪補償量子井戸を用いるGaInAsP/InP低次元量子構造レーザに関する研究

1999年 - 2002年
Study about GaInAsP/InP low-dimensional quantum-well laser using strain-compensated quantum-well

1999年 - 2002年