尾沼猛儀 (Takeyoshi Onuma) - マイポータル

基本情報

所属: 独立行政法人科学技術振興機構 ERATO 中村不均一結晶プロジェクト研究員

学位: 修士(理学)(筑波大学)

J-GLOBAL ID: 200901023670935726
researchmap会員ID: 1000370364

外部リンク: http://bukko.bk.tsukuba.ac.jp/~optoelec/index.html

研究キーワード

研究分野

学歴

MISC

Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, JF Keading, S Keller, UK Mishra, S Nakamura …

JOURNAL OF APPLIED PHYSICS 95(5) 2495-2504 2004年3月
Radiative and nonradiative processes in strain-free AlxGa1-xN films studied by time-resolved photoluminescence and positron annihilation techniques

T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, JF Keading, S Keller, UK Mishra, S Nakamura …

JOURNAL OF APPLIED PHYSICS 95(5) 2495-2504 2004年3月
Critical roles of decomposition-shielding layer deposited at low temperature governing the structural and photoluminescence properties of cubic GaN epilayers grown on (001)GaAs by metalorganic vapor phase epitaxy

M Sugiyama, T Nosaka, T Onuma, K Nakajima, P Ahmet, T Aoyama, T Chikyow, SF Chichibu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43(1) 106-110 2004年1月
Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

ONUMA T, CHICHIBU S F, UEDONO A, YOO Y‐Z, CHIKYOW T, SOTA T, KAWASAKI M, KOINUMA H

Applied Physics Letters 85(23) 5586-5588 2004年
Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double-quantum-well laser diode wafer operated at 450 nm

T Onuma, SF Chichibu, T Aoyama, K Nakajima, P Ahmet, T Azuhata, T Chikyow, T Sota, S Nagahama, T Mukai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42(12) 7276-7283 2003年12月
Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double-quantum-well laser diode wafer operated at 450 nm

T Onuma, SF Chichibu, T Aoyama, K Nakajima, P Ahmet, T Azuhata, T Chikyow, T Sota, S Nagahama, T Mukai

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42(12) 7276-7283 2003年12月
Improved emission efficiency in InGaN/GaN quantum wells with compositionally-graded barriers studied by time-resolved photoluminescence spectroscopy

T Onuma, Y Uchinuma, EK Suh, HJ Lee, T Sota, SF Chichibu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(11B) L1369-L1371 2003年11月
In situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO

T Koyama, T Onuma, S Chichibu

APPLIED PHYSICS LETTERS 83(14) 2973-2975 2003年10月
Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T Onuma, S Chichibu, Y Uchinuma, T Sota, S Yamaguchi, S Kamiyama, H Amano, Akasaki, I

JOURNAL OF APPLIED PHYSICS 94(4) 2449-2453 2003年8月
Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

T Onuma, S Chichibu, Y Uchinuma, T Sota, S Yamaguchi, S Kamiyama, H Amano, Akasaki, I

JOURNAL OF APPLIED PHYSICS 94(4) 2449-2453 2003年8月
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

S Chichibu, T Onuma, T Sota, SP DenBaars, S Nakamura, T Kitamura, Y Ishida, H Okumura

JOURNAL OF APPLIED PHYSICS 93(4) 2051-2054 2003年2月
Heteroepitaxy of hexagonal ZnS thin films directly on Si (111)

Japanese Journal of Applied Physics Part1 Vol.42 No.11 pp.7029-7032 2003年
Improved emission efficiency in InGaN / GaN quantum wells with composition-graded walls studied by time-resolved photoluminescence spectroscopy

Japanese Journal of Applied Physics Part2 vol.42 No.11B pp.L1369-L1371 2003年
Heteroepitaxy of Hexagonal ZnS Thin Films Directly on Si (111)

Yoo Young-Zo, Chikyow Toyohiro, Kawasaki Masashi, Onuma Takeyohi, Chichibu Shigefusa, Koinuma Hideomi

Japanese journal of applied physics. Pt. 1, Regular papers & short notes Part1 Vol.42 No.11 pp.7029-7032(11) 7029-7032 2003年
In-situ spectral control of Zn species during helicon-wave-excited-plasma sputtering epitaxy of ZnO

Applied Physics Letters 83 (14), pp.2973-2975 2003年
Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

T Onuma, SF Chichibu, T Sota, K Asai, S Sumiya, T Shibata, M Tanaka

APPLIED PHYSICS LETTERS 81(4) 652-654 2002年7月
Decay processes of the C-2 (2)Pi(1/2u) states of Ar-2(+), Kr-2(+), and Xe-2(+)

H Yoshii, T Hayaishi, T Onuma, T Aoto, Y Morioka, K Ito

JOURNAL OF CHEMICAL PHYSICS 117(4) 1517-1521 2002年7月
Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy

T Onuma, SF Chichibu, T Sota, K Asai, S Sumiya, T Shibata, M Tanaka

APPLIED PHYSICS LETTERS 81(4) 652-654 2002年7月
Vibrationally resolved threshold photoelectron-photoion coincidence spectra of ArXe

H Yoshii, T Hayaishi, T Onuma, T Aoto, Y Morioka, K Ito

JOURNAL OF CHEMICAL PHYSICS 116(17) 7468-7472 2002年5月
Cascade processes after 3p-shell threshold photoionization of Kr

Journal of Physics B: At. Mol. Opt. Phys. 35 (14), pp.3069-3075 2002年

もっとみる

所属学協会

共同研究・競争的資金等の研究課題

窒化物半導体の発光ダイナミクスの解明

2001年 - 2006年
ガスソース分子線エピタキシ法を用いた窒化物半導体の成長

ＪＳＴ戦略的創造研究推進制度（総括実施型）（創造科学技術推進事業：ＥＲＡＴＯ） 2001年
III族窒化物半導体の光学評価

ＪＳＴ戦略的創造研究推進制度（総括実施型）（創造科学技術推進事業：ＥＲＡＴＯ） 2001年
Growth of nitride semiconductor using gas source molecular beam epitaxy

JST Basic Research Programs (Exploratory Research for Advanced Technology :ERATO) 2001年
Optical characterization of group III-nitride semiconductor.

JST Basic Research Programs (Exploratory Research for Advanced Technology :ERATO) 2001年