MISC

2004年10月

Resistive oxygen sensors using cerium oxide thin films prepared by metal organic chemical vapor deposition and sputtering

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
  • N Izu
  • ,
  • N Murayama
  • ,
  • W Shin
  • ,
  • Matsubara, I
  • ,
  • S Kanzaki

43
10
開始ページ
6920
終了ページ
6924
記述言語
英語
掲載種別
DOI
10.1143/JJAP.43.6920
出版者・発行元
INST PURE APPLIED PHYSICS

We fabricated oxygen sensors with thin films of single-phase cerium oxide prepared by metal organic chemical vapor deposition (MOCVD) and sputtering, and investigated the properties of both sensors. The response times of the thin films prepared by MOCVD and sputtering were about 9s when the films were heated to 888K for the first time. However, the response time increased each time, each sensor was heated to 1274K. The deterioration of the response time in this study seems to be related to increasing crystallite size. It was concluded that the thin film prepared by sputtering was suitable for oxygen sensors compared with that prepared by MOCVD.

リンク情報
DOI
https://doi.org/10.1143/JJAP.43.6920
CiNii Articles
http://ci.nii.ac.jp/naid/150000042312
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000224780300017&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/JJAP.43.6920
  • ISSN : 0021-4922
  • CiNii Articles ID : 150000042312
  • Web of Science ID : WOS:000224780300017

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