2020年7月28日
Topologically Nontrivial Phase-Change Compound GeSb2Te4
ACS Nano
- 巻
- 14
- 号
- 7
- 開始ページ
- 9059
- 終了ページ
- 9065
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/acsnano.0c04145
- 出版者・発行元
- American Chemical Society (ACS)
Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.
- リンク情報
- ID情報
-
- DOI : 10.1021/acsnano.0c04145
- ISSN : 1936-0851
- eISSN : 1936-086X
- ORCIDのPut Code : 78126489
- Web of Science ID : WOS:000557762800126