(Y,Yb)MnO 3 /HfO 2 /Si and (Y,Yb)MnO 3 /Y 2 O 3 /Si structures were constructed using alkoxy-derived precursor solutions. HfO 2 and Y 2 O 3 insulating layers crystallized on Si(100) substrates consisted of uniform grains and had smooth surfaces. The Y 0.5 Yb 0.5 MnO 3 films prepared on the insulating films had preferred orientation along polar c-axis. The Y 0.5 Yb 0.5 MnO 3 films consisted of uniform grains and had smooth surface. The leakage current density of the MFIS structures was in the range of 10 -7 greater than or similar to 10 -8 A/cm 2 at 5 V. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structures and the memory windows were about 3 V.