MISC

2006年1月

Composition dependence of microstructure and dielectric properties in alkoxy-derived Ba(Ti,Zr)O-3 thin films

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
  • K Tanaka
  • ,
  • K Suzuki
  • ,
  • K Nishizawa
  • ,
  • T Miki
  • ,
  • K Kato

45
1A
開始ページ
155
終了ページ
159
記述言語
英語
掲載種別
DOI
10.1143/JJAP.45.155
出版者・発行元
INST PURE APPLIED PHYSICS

Lead- and bismuth-free Ba(Ti1-x-Zr-x(x))O-3 (BTZ x = 0.00-0.50) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process. In the case of increasing Zr content x, the crystallinity of BTZ thin films changed from the typical random orientation to the (111) preferred orientation, and the average crystallite size changed to be between 25 and 48 nm. The shape of P-E hysteresis loops and the dielectric constant Er of BTZ thin films were improved around x = 0.20. The pinching effect region of BTZ thin films consisting of nano-crystals is considered to be around x = 0.20, and this changed with crystallite size as a function of sintering temperature. The epsilon(r) of the BTZ thin films strongly depended on the average crystallite size.

リンク情報
DOI
https://doi.org/10.1143/JJAP.45.155
CiNii Articles
http://ci.nii.ac.jp/naid/150000046232
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235150700037&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/JJAP.45.155
  • ISSN : 0021-4922
  • CiNii Articles ID : 150000046232
  • Web of Science ID : WOS:000235150700037

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