Indium. tin oxide (ITO) thin films 60-100 nm thick have been grown on SiO2 glass by laser irradiation of the substrate during pulsed laser deposition. A laser beam with an energy density of 0.07 was directed on to the middle part of the substrates during film growths. Films were deposited from a 95 wt% In2O3-5 wt% SnO2 sintered ceramic target at a room temperature and oxygen pressures (P-O2) ranging from 0.13 to 5.99 Pa. The structural, electrical, and optical properties of the laser-irradiated and the nonirradiated parts of the films were studied as a function of P-O2. Crystalline ITO films with <1 1 1> preferred orientation were observed at all P-O2, except 0.13 Pa. Under P-O2 around 1.33 Pa, minimal resistivities of 1.2 x 10(-4) and 2.3 x 10(-4) Omega CM were obtained on the laser irradiated and the nonirradiated parts of the deposited films. The observed low resistivity for the laser-irradiated part of the films was a consequence of both the high carrier concentration and Hall mobility of the films. High optical transmittance (> 85%) to visible light was obtained. (C) 2002 Elsevier Science Ltd. All rights reserved.