1999年8月
Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation
THIN SOLID FILMS
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 350
- 号
- 1-2
- 開始ページ
- 79
- 終了ページ
- 84
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0040-6090(99)00278-3
- 出版者・発行元
- ELSEVIER SCIENCE SA
Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO2 glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In2O3-10 wt.% SnO2 sintered ceramic target. The growths of ITO films under different oxygen pressures (Po-2) ranging from 1 x 10(-4)-5 x 10(-2) Torr at low substrate temperatures (T-s) between room temperature (RT) and 200 degrees C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the Po-2 during the film deposition. Under a Po-2 of 1 x 10(-2) Torr, ITO films with low resistivity of 5.35 x 10(-4) and 1.75 x 10(-4) ht cm were obtained at RT(25 degrees C) and 200 degrees C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal Po-2 region of 1 x 10(-2) to 1.5 x 10(-2) Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po-2 greater than or equal to 1 X 10(-2) Torr and it was significantly reduced as the Po-2 decreases. (C) 1999 Elsevier Science S.A. All rights reserved.
- リンク情報
-
- DOI
- https://doi.org/10.1016/S0040-6090(99)00278-3
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000082023400014&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0032624002&origin=inward
- ID情報
-
- DOI : 10.1016/S0040-6090(99)00278-3
- ISSN : 0040-6090
- SCOPUS ID : 0032624002
- Web of Science ID : WOS:000082023400014