MISC

2006年9月

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • O. Fukuoka
    • ,
  • N. Matsunami
    • ,
  • M. Tazawa
    • ,
  • T. Shimura
    • ,
  • M. Sataka
    • ,
  • H. Sugai
    • ,
  • S. Okayasu
巻
250
号
1-2
開始ページ
295
終了ページ
299
記述言語
英語
掲載種別
DOI
10.1016/j.nimb.2006.04.146
出版者・発行元
ELSEVIER SCIENCE BV
Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 degrees C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification. (c) 2006 Elsevier B.V. All rights reserved.
リンク情報
DOI
https://doi.org/10.1016/j.nimb.2006.04.146
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000239883500060&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nimb.2006.04.146
  • ISSN : 0168-583X
  • identifiers.cinii_nr_id : 9000239248799
  • Web of Science ID : WOS:000239883500060
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