We report on visible photoluminescence properties of the Pr3+-doped Ga2S3-GeS2-La2S3 glass, where emission intensities per ion depend not only on the Pr3+ concentration but on the temperature in annealing process after glass formation. The Pr3+-concentration dependence of the intensity of each emission band is different according to the excited electronic states, while the difference between bands is small for the annealing-temperature dependence. Structural observation reveals that these properties are not because of any microcrystallization of the metallic ions, and structural analysis through X-ray diffraction suggests that they are because of the change in local structures other than those of Ge-S bond. (C) 2003 Elsevier B.V. All rights reserved.