NAKAMURA Tohru

J-GLOBAL         Last updated: May 30, 2017 at 13:24
 
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Name
NAKAMURA Tohru
Degree
Ph. D(Waseda University)

Research Areas

 
 

Academic & Professional Experience

 
 
   
 
Professor,Scientist, Center of Ion Beam Technolgy, Hosei University,Chief Scientist, Research Center for Micro-Nano Technology, Hosei University,College Deans, Hosei University Faculty of Science and Engineering Department of Electrical and Electronics Engineering
 
1975
 - 
1998
:Central Research Laboratory, Hitachi Ltd.
 
1990
 - 
1998
:Part-time Lecturer, Dept of EECE, Hosei University
 
1992
 - 
1993
:Visiting Professor, Dept of ECE, Universiry of California at San Diego
 
1995
 - 
1998
:Part-time Lecturer, Dept of EECE, Hosei University
 

Education

 
 
 - 
1975
Electrical Engineering, Graduate School, School of Science and Engineering, Waseda University
 

Committee Memberships

 
Jan 2000
 - 
Dec 2001
Guest Editor, IEEE Transaction on Electron Devices, Special Issue on Bipolar Transistor Technology, Vol. 48, No. 11, 2001  
 
Sep 1997
 - 
Sep 2001
Subcommittee member of the IEEE Topical Workshop on Heterostructure Microelectronics  
 
Sep 1997
 - 
Aug 2002
Subcommittee member of the IEEE Topical Workshop on Heterostructure Microelectronics  
 
Sep 1994
 - 
Sep 1998
Subcommittee member of the Bipolar &BiCMOS Circuits and Technology Meeting(BCTM)  
 
Dec 1993
 - 
Apr 1999
Editor for IEEE Transaction on Electron Devices  
 

Awards & Honors

 
1999
IEEE Fellow
 
1997
Tokyo Governor's Award - Distinguished Inventor, in 1997
 
1991
Kanto Invention Award by Japan Institute of Invention and Innovation, in 1991
 

Misc

 
High-breakdown-voltage and low-on-resistance GaN p-n junction diodes on free-standing GaN substrates
NAKAMURA Tohru, Yohei Otoki, Masatomo Shibata, Hitachi Metals, Kazuki Nomoto, Akihisa Terano, Naoki Kaneda, Tomoyoshi Mishima
SPIE Photonics West 2015, Gallium Nitride Materials and Devices X   9363-4   2015
NAKAMURA Tohru, K. Mochizuki, T. Mishima, Y. Ishida, Y. Hatakeyama, K. Nomoto, N. Kaneda, T. Tsuchiya, A. Terano, T. Tsuchiya, H. Uchiyama, S. Tanaka
Materials Science Forum   778-780 1189-1192   2014
Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate
NAKAMURA Tohru
19th International Conference on Ion Beam Modification of Materials(IBMM2014)   PC86   2014
Threshold Voltage Control of GaN MISFETs Using Tilt Angle Ion Implantation of Magnesium
NAKAMURA Tohru, Hayao Kasai, Takuya Oikawa, Hiroki Ogawa, Tomoyoshi Mishima
International Workshop on Nitride Semiconductor 2014   (WeEP12)    2014
NAKAMURA Tohru, Kazuhiro Mochizuki, Tomoyoshi Mishima, Yuya Ishida, Yoshitomo Hatakeyama, Kazuki Nomoto, Naoki Kaneda, Tadayoshi Tsuchiya, Akihisa Terano, Tomonobu Tsuchiya, Hiroyuki Uchiyama, Shigehisa Tanaka and Tohru Nakamura
Materials Science Forum   778-780 1189-1192   2014

Books etc

 
Electronics for Ultra-High-Speed devices
Corona Publishing Co. Ltd.   2003   
Ultra Large Scale Integration No.11, Chaper 16, Future Perspective of High Speed Bipolar Technology
1992   
Ultra-Fast Silicon Bipolar Devices Advanced Self-Align Technologies and Resulting Structure of High Speed Bipolar Transistors
1988   
Ultra Large Scale Integration No.11 Chaper 1, High Speed Bipolar Technology
1987   
Japan Annual Review in Electronics,Computer,&Telecommunication vol. SEMICONDUCTOR TECHNOLOGIES Chapter 9: SICOS-High-Speed Self-Aigned Bipolar Transister
1984   

Conference Activities & Talks

 
Ion Implantation into GaN & Advanced GaN HEMT Devices
Special Lecture Program for Distinguished Foreign Scholar at Hangyang University   2009   

Research Grants & Projects

 
Ion Implanted GaN-HEMTs
Project Year: 2004   
SiC Bipolar Transistor
Project Year: 2005   
1/f noise characteristics of GaN-HEMT
Project Year: 2006   
Study on Semiconductor Electrom Devices