坂本 渉

強反転領域におけるSGTの移動度増加 

電子情報通信学会論文誌C Vol. J88-C, No. 5, pp. 338-339 2005年  

Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE 

Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc. PV2003-05 331-336 2003年  

Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE 

Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc. PV2003-05 331-336 2003年