Wataru Sakamoto

強反転領域におけるSGTの移動度増加 

電子情報通信学会論文誌C, Vol. J88-C, No. 5, pp. 338-339, 2005  

Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE 

Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc., PV2003-05 331-336, 2003  

Reduction of Pass-gate leakage by silicon-thickness thinning in double-gate MOSFEE 

Silicon-on-Insulator Technology and Devices XI, the Electrochemical Society Inc., PV2003-05 331-336, 2003